04/2003
AWT6302
PCS/CDMA 3.4V/28dBm
Linear Power Amplifier Module
ADVANCED PRODUCT INFORMATION - Rev 0.1
M9 Package
8 Pin 3mm x 3mm
Surface Mount Module
Figure 1: Block Diagram
Bias Control
VCC
VREF
RFIN RFOUT
GND
VMODE
1
7
5
8
6
GND at slug (pad)
3
4
2
VCC
GND
advanced InGaP HBT MMIC technology offering
state-of-the-art reliability, temperature stability, and
ruggedness. Selectable bias modes that optimize
efficiency for different output power levels, and a
shutdown mode with low leakage current, increase
handset talk and standby time. The self-contained
3mm x 3mm surface mount package incorporates
matching networks optimized for output power,
efficiency, and linearity in a 50 Ω system.
FEATURES
• InGaP HBT Technology
• High Efficiency: 40%
• Low Quiescent Current: 50 mA
• Low Leakage Current in Shutdown Mode: <1 µA
•VREF = +2.8 V (+2.7 V min over temp)
• Optimized for a 50 Ω System
• Low Profile Miniature Surface Mount Package:
1.1mm
• CDMA 1XRTT, 1xEV-DO Compliant
• Pinout Enables Easy Phone Board Migration
From 4mm x 4mm Package
APPLICATIONS
• PCS CDMA Wireless Handsets
• Dual Band CDMA Wireless Handsets
PRODUCT DESCRIPTION
The AWT6302 meets the increasing demands for
higher efficiency and linearity in CDMA 1X handsets,
while reducing pcb area by 44%. The package
pinout was chosen to enable handset
manufacturers to switch from a 4mm x 4mm PA
module with very few layout changes to the phone
board. The PA module is optimized for VREF = +2.8 V, a
requirement for compatibility with the Qualcomm®
6000 chipset. The device is manufactured on an