2SD2114KU
器件描述：High-current Gain MediumPower Transistor (20V, 0.5A)
器件厂商：ROHM [Rohm]
厂商主页：http://www.rohm.com/
文件大小：132.83KB，共4页
Sponsor by e络盟器件资料摘要：
(96-232-C107)
External dimensions (Units: mm)
232
Transistors
High-current Gain Medium
Power Transistor (20V, 0.5A)
2SD2114K / 2SD2144S
Features
1) High DC current gain.
hFE = 1200 (Typ.)
2) High emitter-base voltage.
VEBO = 12V (Min.)
3) Low VCE(sat).
VCE(sat) = 0.18V (Typ.)
(IC /IB = 500mA / 20mA)
Structure
Epitaxial planar type
NPN silicon transistor
External dimensions (Units: mm)
232
Transistors
High-current Gain Medium
Power Transistor (20V, 0.5A)
2SD2114K / 2SD2144S
Features
1) High DC current gain.
hFE = 1200 (Typ.)
2) High emitter-base voltage.
VEBO = 12V (Min.)
3) Low VCE(sat).
VCE(sat) = 0.18V (Typ.)
(IC /IB = 500mA / 20mA)
Structure
Epitaxial planar type
NPN silicon transistor