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© 2000 IXYS All rights reserved
G = Gate, C = Collector,
E = Emitter, TAB = Collector
Symbol Test Conditions Maximum Ratings
V
CES
T
J
= 25G176C to 150G176C 600 V
V
CGR
T
J
= 25G176C to 150G176C; R
GE
= 1 MG87 600 V
V
GES
Continuous G17720 V
V
GEM
Transient G17730 V
I
C25
T
C
= 25G176C40A
I
C90
T
C
= 90G176C2
I
CM
T
C
= 25G176C, 1 ms 80 A
SSOA V
GE
= 15 V, T
VJ
= 125G176C, R
G
= 22 G87 I
CM
= 40 A
(RBSOA) Clamped inductive load, L = 100 G109H @ 0.8 V
CES
P
C
T
C
= 25G176C 150 W
T
J
-55 ... +150 G176C
T
JM
150 G176C
T
stg
-55 ... +150 G176C
M
d
Mounting torque (M3) TO-247AD 1.13/10 Nm/lb.in.
Maximum lead temperature for soldering 300 G176C
1.6 mm (0.062 in.) from case for 10 s
Weight TO-247AD 6 g
TO-268 4 g
Symbol Test Conditions Characteristic Values
(T
J
= 25G176C, unless otherwise specified)
min. typ. max.
BV
CES
I
C
= 250 G109A, V
GE
= 0 V 600 V
V
GE(th)
I
C
= 250 G109A, V
CE
= V
GE
2.5 5.5 V
I
CES
V
CE
= 0.8 • V
CES
T
J
= 25G176C 200 G109A
V
GE
= 0 V T
J
= 150G176C3m
I
GES
V
CE
= 0 V, V
GE
= G17720 V G177100 nA
V
CE(sat)
I
C
= I
C90
, V
GE
= 15 V 1.7 2.0 V
HiPerFAST
TM
IGBT V
CES
= 600 V
with Diode I
C25
= 40 A
V
CE(sat)typ
= 1.7 V
t
fi(typ)
= 100 ns
98566A (3/99)
IXGH 20N60BD1
IXGT 20N60BD1
C (TAB)
G
C
E
TO-247 AD
(IXGH)
TO-268
(IXGT)
G
E
C (TAB)
Features
International standard packages
High frequency IGBT and antiparallel
FRED in one package
High current handling capability
HiPerFAST
TM
HDMOS
TM
process
MOS Gate turn-on
-drive simplicity
Applications
Uninterruptible power supplies (UPS)
Switched-mode and resonant-mode
power supplies
AC motor speed control
DC servo and robot drives
DC choppers
Advantages
Space savings (two devices in one
package)
High power density
Suitable for surface mounting
Very low switching losses for high
frequency applications
Easy to mount with 1 screw,TO-247
(insulated mounting screw hole)
Preliminary data
IXYS reserves the right to change limits, test conditions, and dimensions.