2SK3050
Transistors
1/4
Small switching (600V, 2A)
2SK3050


zFeatures
1) Low on-resistance.
2) Fast switching speed.
3) Wide SOA (safe operating area).
4) Gate-source voltage (VGSS)
guaranteed to be ±30V.
5) Easily designed drive circuits.
6) Easy to use in parallel.


zStructure
Silicon N-channel
MOSFET
zExternal dimensions (Unit : mm)
−0.1
+0.2
−0.1
+0.2
+
0.3
−
0.1
2.3±0.22.3±0.2
0.65±0.1
0.9
0.75
1.0±0.2
0.5±0.1
9.5±0.5
5.5
1.5±0.3
2.5
1.5
2.3
0.5±0.1
6.5±0.2
5.1
C0.5
(3)(2)(1)
0.9
(1) Gate
(2) Drain
(3) Source
ROHM : CPT3
EIAJ : SC-63


zAbsolute maximum ratings (Ta=25°C)
Parameter
Storage temperature
Channel temperature
Total power dissipation (Tc=25°C)
Drain current
Gate-source voltage
Drain-source voltage VDSS
VGSS
IDR
PD
Tch
600 V
V
A
A
W
°C
±30
2ID
IDRP
∗
A
IDP
∗
Continuous
Pulsed
Continuous
Pulsed
A6
2
6
20
150
Tstg °C−55 to +150
Symbol Limits Unit
∗Pw≤10µs, Duty cycle≤1%
Reverse drain
current



zPackaging specifications
Package
Code
Basic ordering unit (pieces)
TL
2500
Taping
2SK3050
Type