2SD2704K / 2SD2705S
Transistors
1/4
For Muting (20V, 0.3A)
2SD2704K / 2SD2705S


zFeatures
1) High DC current gain.
hFE = 820 to 2700
2) High emitter-base voltage.
VEBO = 25V (Min.)
3) Low Ron
Ron= 0.7Ω (Typ.)


zStructure
Epitaxial planar type
NPN silicon transistor











zExternal dimensions (Unit : mm)
2SD2705S
2SD2704K
(1) Emitter
(2) Collector
(3) Base
ROHM : SPT
EIAJ : SC-72
0 to 0.1
2.8
±
0.2
1.6
0.3 to 0.6
1.1
0.8±0.1
0.15
0.4
2.9±0.2
1.9±0.2
0.95 0.95
+
0.2
−
0.1
−0.1
+0.2
+0.1
−0.06+0.1
−0.05
(2)(1)
(3)
(1) Emitter
(2) Base
(3) Collector
ROHM : SMT3
EIAJ : SC-59 Abbreviated symbol: XL
All terminals have same dimensions
∗ Denotes hFE
3
±
0.2
(15Min.)
4±0.2 2±0.2
0.45
0.5
0.45
5
(1) (2) (3)
−0.05
+0.15
+0.15
−0.05
2.5
+0.4
−0.1
3Min.

zAbsolute maximum ratings (Ta=25°C)
Parameter
VCBO
VCEO
VEBO
IC
PC
Tj
Tstg
50 V
V
V
A
W
°C
°C
20
25
0.3
0.2
0.3
150
−55 to +150
Symbol Limits Unit
2SD2704K
2SD2705S
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Collector power
dissipation
Junction temperature
Storage temperature