2SD2687S
Transistors
1/2
Low frequency amplifier, storobo
2SD2687S


zApplication
Low frequency amplifier
Storobo


zFeatures
1) A collector current is large.
2) V
CE(sat)
≤ 250mV
At lc=1.5A / l
B
=30mA





zExternal dimensions (Unit : mm)
Taping specifications
0.45
2.5
(1) (2) (3)
(15Min.)
5.0
3.0
3Min.
0.450.5
4.0 2.0
(1)Emitter(GND)
(2)Collector(OUT)
(3)Base(IN)



zAbsolute maximum ratings (Ta=25°C)
Parameter
Single pulse, Pw=10ms
Symbol
VCBO
VCEO
VEBO
IC
ICP
PC
Tj
Tstg
Limits
15
12
6
5
400
150
−55 to +150
8
∗
Unit
V
V
V
A
A
mW
°C
°C
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Power siddipation
Junction temperature
Range of storage temperature
∗



zElectrical characteristics (Ta=25°C)
Parameter Symbol Min. Typ. Max. Unit Conditions
VCB=10V, IE=0A, f=1MHz
Transition frequency fT − 360 − MHz VCE=2V, IE=−500mA, f=100MHz
BVCBO 15 −−V IC=10µA
Collector-emitter breakdown voltage BVCEO 12 −−V IC=1mA
Collector-base breakdown voltage
BVEBO 6 −−V IE=10µAEmitter-base breakdown voltage
ICBO −−100 nA VCB=15VCollector cutoff current
IEBO −−100 nA VEB=6VEmitter cutoff current
VCE(sat) − 120 250 mV IC=1.5A, IB=30mACollector-emitter saturation voltage
hFE 350 − 680 − VCE=2V, IC=500mADC current gain
Cob − 30 − pFCollector output capacitance
∗
∗
∗ Pulse