2SD2662
Transistors
Rev.A 1/2
Low frequency amplifier
2SD2662


zApplication
Low frequency amplifier
Driver


zFeatures
1) A collector current is large.
2) VCE(sat) ≦ 350mV
At IC = 1A / IB = 50mA









zExternal dimensions (Unit : mm)
ROHM : MPT3
JEITA : SC-62
JEDEC: SOT-89
1.5
0.4
1.5 0.4
1.60.53.0
0.41.5
(3)
4.5
(1)
(2)
0.5
4.0
2.51.0
(1)Base
(2)Collector
(3)Emitter
Abbreviated symbol : FZ



zAbsolute maximum ratings (Ta=25°C)
Parameter Symbol
VCBO
VCEO
VEBO
IC
ICP
PC
Tj
Tstg
Limits
30
30
6
1.5
500
150
−55 to +150
3
∗1
∗2
Unit
V
V
V
A
A
mW
2W
°C
°C
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Power dissipation
Junction temperature
Range of storage temperature
∗1 Single pulse, PW=1ms
∗2 Mounted on a 40×40× 0.7mm Ceramic substrate
t


zPackaging specifications
2SD2662
T100
1000
Type
Package
Code
Basic ordering unit (pieces)
Taping







zElectrical characteristics (Ta=25°C)
Parameter Symbol Min. Typ. Max. Unit Conditions
VCB=10V, IE=0A, f=1MHz
fT − 330 − MHz VCE=2V, IE=−100mA, f=100MHz
BVCBO 30 −−V IC=10µA
BVCEO 30 −−V IC=1mA
BVEBO 6 −−V IE=10µA
ICBO −−100 nA VCB=30V
IEBO −−100 nA VEB=6V
VCE(sat) − 160 350 mV IC=1A, IB=50mA
hFE 270 − 680 − VCE=2V, IC=100mA
Cob − 11 − pF
∗
∗
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut off current
Emitter cut off current
Collector-emitter saturation voltage
DC current gain
Transition frequency
Corrector output capacitance
∗ Pulsed