2SC5877S
Transistors
1/3
Power transistor (60V, 0.5A)
2SC5877S


!Features
1) High speed switching.
(Tf : Typ. : 80ns at IC = 500mA)
2) Low saturation voltage, typically
(Typ. : 150mV at IC = 100mA, IB = 10mA)
3) Strong discharge power for inductive load and
capacitance load.
4) Complements the 2SA2089S


!Applications
Small signal low frequency amplifier
High speed switching
!External dimensions (Unit : mm)
Taping specifications
Symbol : C5877S
SPT
0.45
2.5
(1) (2) (3)
(15Min.)
5.0
3.0
3Min.
0.450.5
4.0 2.0
(1) Emitter
(2) Collector
(3) Base



!Structure
NPN Silicon epitaxial planar transistor


!Packaging specifications
Taping
2SC5877S
Type TP
5000
Package
Basic ordering unit (pieces)
Code



!Absolute maximum ratings (Ta=25°C)
Parameter
V
V
V
A
A
mW
°C
°C
Symbol
VCBO
VCEO
VEBO
IC
ICP
PC
Tj
Tstg
Limits Unit
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Power dissipation
Junction temperature
Range of storage temperature
DC
Pulsed
60
60
6
0.5
1.0
300
150
−55 to 150
∗1
∗Pw=10ms