2SC2062S
Transistors
Rev.A 1/2
High-gain Amplifier Transistor (32V, 0.3A)
2SC2062S


zFeatures
1) Darlington connection for a high hFE.
(DC current gain = 5000 (Min.) at VCE = 3V, IC = 0.1A.)
2) High input impedance.


zAbsolute maximum ratings (Ta=25
°
C)
E
C
B
C
B
E
: Emitter
: Collector
: Base

zExternal dimensions (Unit : mm)
Taping specifications
SPT
0.45
2.5
(1) (2) (3)
(15Min.)
5.0
3.0
3Min.
0.450.5
4.0 2.0
(1)Emitter
(2)Collector
(3)Base



zAbsolute maximum ratings (Ta=25
°
C)
Parameter Symbol
VCBO
VCES
VEBO
IC
PC
Tj
Tstg
Limits
40
32
12
0.3
0.3
150
−55 to +150
Unit
V
V
V
A
W
°C
°C
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Collector power dissipation
Junction temperature
Storage temperature



zElectrical characteristics (Ta=25
°
C)
Parameter Symbol Min. Typ. Max. Unit Conditions
BVCBO
BVCES
BVEBO
ICBO
IEBO
fT
Cob
40
32
12
−
−
−
−
−
−
−
−
−
200
2.5
−
−
−
0.1
0.1
− ∗
−
V
V
V
µA
µA
MHz
pF
IC=100µA
IC=10mA
IE=100µA
VCB=30V
VEB=12V
VCE(sat) −−1.4 V IC/IB=200mA/0.2mA
hFE 10000 −−−VCE/IC=3V/0.1A
VCE=5V , IE= −10mA , f=100MHz
VCB=10V , IE=0A , f=1MHz
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cutoff current
Emitter cutoff current
DC current transfer ratio
Transition frequency
Output capacitance
Collector-emitter saturation voltage
∗ Transition frequency of the device.



zPackaging specifications and hFE
Type 2SC2062S
SPT
C
TP
5000
Package
hFE
Code
Basic ordering unit (pieces)