Medium Power Transistor (50V,0.5A)
2SC1741AS
Symbol
V
CBO
V
CEO
V
EBO
I
C
PC
Tj
Tstg
Limits
50
50
5
0.5
0.3
150
-55 to +150
Unit
V
V
V
A
W
Symbol Min. Typ. Max. Unit Conditions
BV
CBO
BV
CEO
BV
EBO
I
CBO
I
EBO
h
FE
f
T
Cob
50
50
5
-
-
120
-
-
-
-
-
-
-
-
250
6.5
-
-
-
0.5
0.5
390
-
-
V
V
V
-
MHz
pF
I
C
=1mA
V
CB
=30V
V
EB
=4V
V
CE
/I
C
=3V/0.1A
V
CE
=5V , I
E
=-20mA , f=100MHz
V
CB
=10V , I
E
=0A , f=1MHz
Transistors
2SC1741AS
C
C
A
I
C
=100 A
I
E
=100 A
A
1/2
Parameter
Transition frequency
Output capacitance
V
CE(sat) - - 0.4 V IC/IB=150mA/15mA
Electrical characteristics (Ta=25 C)
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector outoff current
Collector power dissipation
Junction temperature
Storage temperature
Absolute maximum rationgs (Ta=25 C)
Packaging specifications and h
FE
Type
Package
h
FE
Code
Basic ordering unit (pleces)
2SC1741AS
SPT
QR
TP
5000
Marking -
Features
1) High current.(IC=5A)
2) Low saturation voltage, typically VCE(sat)=0.1V at IC / IB=150mA / 15mA.
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Emitter cutoff current
DC current rransfer ratio
Collector-emitter saturation voltage