2SB1733
Transistors
Rev.A 1/2
General purpose amplification (−30V, −1A)
2SB1733


zApplication
Low frequency amplifier
Driver


zFeatures
1) A collector current is large.
2) Collector saturation voltage is low.
VCE(sat) : max. −350mV
at Ic = −500mA / IB = −25mA




zExternal dimensions (Unit : mm)
ROHM :TUMT3 Abbreviated symbol : EW (1) Base
(2) Emitter
(3) Collector
0.3
0.770.17
0.15Max.
2.01.3
0.65
0.65
(3)
(1)
(2)
1.7 0.20.2
2.1
0~0.1
0.85Max.




zAbsolute maximum ratings (Ta=25°C)
Parameter Symbol
VCBO
VCEO
VEBO
IC
ICP
PC
Tj
Tstg
Limits
−30
−30
−6
−1
0.4
150
−55 to +150
−2
∗1
Unit
V
V
V
A
A
W
°C
°C
∗2
0.8 W
∗3
∗1
∗2
∗3
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Power dissipation
Junction temperature
Range of storage temperature
Single pulse, PW=1ms
Each Terminal Mounted on a Recommended land pattern
Mounted on a 25mm×25mm×
t
0.8mm ceramic substrate

zPackaging specifications
2SB1733
TL
3000
Type
Package
Code
Basic ordering unit (pieces)
Taping








zElectrical characteristics (Ta=25°C)
Parameter Symbol Min. Typ. Max. Unit Conditions
VCB=−10V, IE=0A, f=1MHz
fT − 320 − MHz VCE=−2V, IE=100mA, f=100MHz
BVCBO −30 −−V IC=−10µA
BVCEO −30 −−V IC=−1mA
BVEBO −6 −−V IE=−10µA
ICBO −−−100 nA VCB=−30V
IEBO −−−100 nA VEB=−6V
VCE(sat) −−150 −350 mV IC=−500mA, IB=−25mA
hFE 270 − 680 − VCE=−2V, IC=−100mA
Cob − 7 − pF
∗
∗
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cutoff current
Emitter cutoff current
Collector-emitter saturation voltage
DC current gain
Transition frequency
Corrector output capacitance
∗ Pulsed