2SB1730
Transistors
Rev.A 1/2
General purpose amplification(−12V, −2A)
2SB1730


zApplications zExternal dimensions (Unit : mm)
Low frequency amplifier
ROHM : TUMT3 Abbreviated symbol : FV (1) Base
(2) Emitter
(3) Collector
0.3
0.77
0.17
0.15Max.
2.01.3
0.65
0.65
(3)
(1)
(2)
1.7 0.20.2
2.1
0~0.1
0.85Max.
Deiver


zFeatures
1) A collector current is large.
2) Collector saturation voltage is low.
VCE(sat) ≤ −180mV
at IC= −1A / IB= −50mA


zPackaging specifications
TL
3000
Type
Package
Code
Taping
Basic ordering
unit (pieces)
2SB1730


zAbsolute maximum ratings (Ta=25°C)
Parameter
VCBO
VCEO
VEBO
IC
PC
Tj
Tstg
−15 V
V
V
A
mW
°C
°C
−12
−6
−2
A−4
∗
400
150
−55 to +150
Symbol Limits Unit
∗ Single pulse Pw=1ms
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Collector power dissipation
Junction temperature
Storage temperature
ICP


zElectrical characteristics (Ta=25°C)
Parameter Symbol
BVCBO
BVCEO
BVEBO
ICBO
IEBO
hFE
VCE(sat)
Cob
Min.
−15
−12
−6
−
−
270
−
−
−
−
−
−
−
−120
−
15
−
−
−
−100
−100
680
−180
−
V IC=−10µA
IC=−1mA
IE=−10µA
VCB=−15V
VEB=−6V
VCE=−2V, IC=−200mA
IC=−1A, IB=−50mA
VCB=−10V, IE=0mA, f=1MHz
V
V
nA
−
mV
nA
fT − 360 − VCE=−2V, IE=200mA, f=100MHzMHz
pF
Typ. Max. Unit Conditions
Collector-base breakdown voltage
Collector-emitter breakdown viltage
Emitter-base breakdown voltage
Collector cutoff current
Emitter cutoff current
DC current transfer ratio
Collerctor-emitter saturation voltage
Transition frequency
Output capacitance
∗
∗
∗ Pulsed