1N4531 / 1N4148 / 1N4150 / 1N4448
Diodes
Switching diode
1N4531 / 1N4148 / 1N4150 / 1N4448
∗This product is available only outside of Japan.
zApplication
High-speed switching
zFeatures
1) Glass sealed envelope. (MSD, GSD)
2) High speed.
3) High reliability.
zConstruction
Silicon epitaxial planar
zExternal dimensions (Units : mm)
φ 0.5±0.1
C
29±1 29±1
CATHODE BAND (BLACK)
3.8±0.2
A
φ 1.8±0.2
Type No.
ROHM : GSD
EIAJ : −
JEDEC : DO-35
φ 0.5±0.1
C
29±1 29±1
CATHODE BAND (BLACK)
2.7±0.3
A
φ 1.8±0.2
Type No.
ROHM : MSD
EIAJ : −
JEDEC : DO-34
1N4531
1N4148 / 1N4150 / 1N4448
zAbsolute maximum ratings (Ta = 25°C)
Type
1N4148 100 −65~+200−65~+200
(V)
VRM
75
(V)
VR
450
(mA)
IFM
150
(mA)
IO
200
(mA)
IF
2
(A)
1µs
IFSM
500
(mW)
P
200
1N4531 100 −65~+200−65~+20075 450 150 200 2 500 200
1N4150 50 −65~+200−65~+20050 600 200 250 4 500 200
1N4448 100 −65~+200−65~+20075 450 150 200 2 500 200
(°C)
Tj
(°C)
Topr
(°C)
Tstg
zElectrical characteristics (Ta = 25°C)
Type
0.1mA
1.0
0.66
0.62
0.74
0.76
0.86
0.82
0.92
1.0
0.87
1.0
0.54
0.62
0.72
@
0.25mA
@
1mA
@
2mA
@
5mA
@
10mA
@
20mA
@
30mA
@
50mA
@
100mA
@
200mA
@
250mA
@
5µA
75 100 50.0 20 4 4
0.025
5.0
20
75
− 50 0.1 50 100.0 50 2.5 4
− 100 50.0 20 4 4
@
100µA
@
@150°C
VR (V)
@25°C
VR (V)
trr (ns)Cr (pF)IR (µA) Max.BV (V) Min.VF (V)
IF=10mA
f=1MHz
VR=0
RL=100Ω
VR=6V
1N4148
1.0
75 100 50.0 20 4 4
0.025
5.0
20
75
1N4531
1N4150
1N4448
0.025
5.0
20
75
The upper figure is the minimum VF and the lower figure is the maximum VF value.