0809LD120
器件资料摘要：
R.0.2P.991602-BEHRE
GHz TECHNOLOGY INC. RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE. GHz RECOMMENDS THAT BEFORE THE PRODUCT(S) DESCRIBED HEREIN ARE
WRITTEN INTO SPECIFICATIONS, OR USED IN CRITICAL APPLICATIONS, THAT THE PERFORMANCE CHARACTERISTICS BE VERIFIED BY CONTACTING THE FACTORY.
GHz Technology Inc. 3000 Oakmead Village Drive, Santa Clara, CA 95051-0808 Tel. 408 / 986-8031 Fax 408 / 986-8120
0809LD120
120 WATT, 28V, 1 GHz
LDMOS FET
PRELIMINARY ISSUE
GENERAL DESCRIPTION
The 0809LD120 is a common source N-Channel enhancement mode lateral
MOSFET capable of providing 120 Watts of RF power from HF to 1 GHz. The
device is nitride passivated and utilizes gold metallization to ensure high
reliability and supreme ruggedness.
CASE OUTLINE
55QV
Common Source
ABSOLUTE MAXIMUM RATINGS
Power Dissipation
Device Dissipation @25 C (P
d
) 300 W
Thermal Resistance (q
JC
).6 C/W
Voltage and Current
Drain-Source (V
DSS
) 65V
Gate-Source (V
GS
) – 20V
Temperatures
Storage Temperature -65 to +200 C
Operating Junction Temperature +200 C
ELECTRICAL CHARACTERISTICS @ 25 C PER SIDE
SYMBOL CHARACTERISTICS TEST CONDITIONS MIN TYP MAX UNITS
B V
dss
Drain-Source Breakdown V
gs
= 0V, I
d
= 2ma 65 70 V
I
dss
Drain-Source Leakage Current V
ds
= 28V, V
gs
= 0V 1
G01A
I
gss
Gate-Source Leakage Current V
gs
= 20V, V
ds
= 0V 1
G01A
V
gs(th)
Gate Threshold Voltage V
ds
= 10V, I
d
= 100ma 2 4 5 V
V
ds(on)
Drain-Source On Voltage V
gs
= 10V, I
d
= 3A 0.7 V
g
FS
Forward Transconductance V
ds
= 10V, I
d
= 3A 2.2 S
C
rss
Reverse Transfer Capacitance V
ds
= 28V, V
gs
= 0V, F = 1 MHz 5 pF
C
oss
Output Capacitance V
ds
= 28V, V
gs
= 0V, F = 1 MHz 60 pF
This part is input matched.
FUNCTIONAL CHARACTERISTICS @ 25 C
G
PS
Common Source Power Gain V
ds
= 28V, I
dq
= 0.6A,
F = 900MHz, P
out
= 120W
13 dB
h
d
Drain Efficiency V
ds
= 28V, I
dq
= 0.6A,
F = 900MHz, P
out
= 120W
50 %
IMD
3
Intermodulation Distortion,
3
rd
Order
V
ds
= 28V, I
dq
= 0.6A,
P
out
=120W PEP, F
1
= 900 MHz,
F
2
= 900.1 MHz
-30 dBc
Y Load Mismatch Vds = 28V, Idq = 0.6A,
F = 900MHz, P
out
= 120W
5:1
GHz TECHNOLOGY INC. RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE. GHz RECOMMENDS THAT BEFORE THE PRODUCT(S) DESCRIBED HEREIN ARE
WRITTEN INTO SPECIFICATIONS, OR USED IN CRITICAL APPLICATIONS, THAT THE PERFORMANCE CHARACTERISTICS BE VERIFIED BY CONTACTING THE FACTORY.
GHz Technology Inc. 3000 Oakmead Village Drive, Santa Clara, CA 95051-0808 Tel. 408 / 986-8031 Fax 408 / 986-8120
0809LD120
120 WATT, 28V, 1 GHz
LDMOS FET
PRELIMINARY ISSUE
GENERAL DESCRIPTION
The 0809LD120 is a common source N-Channel enhancement mode lateral
MOSFET capable of providing 120 Watts of RF power from HF to 1 GHz. The
device is nitride passivated and utilizes gold metallization to ensure high
reliability and supreme ruggedness.
CASE OUTLINE
55QV
Common Source
ABSOLUTE MAXIMUM RATINGS
Power Dissipation
Device Dissipation @25 C (P
d
) 300 W
Thermal Resistance (q
JC
).6 C/W
Voltage and Current
Drain-Source (V
DSS
) 65V
Gate-Source (V
GS
) – 20V
Temperatures
Storage Temperature -65 to +200 C
Operating Junction Temperature +200 C
ELECTRICAL CHARACTERISTICS @ 25 C PER SIDE
SYMBOL CHARACTERISTICS TEST CONDITIONS MIN TYP MAX UNITS
B V
dss
Drain-Source Breakdown V
gs
= 0V, I
d
= 2ma 65 70 V
I
dss
Drain-Source Leakage Current V
ds
= 28V, V
gs
= 0V 1
G01A
I
gss
Gate-Source Leakage Current V
gs
= 20V, V
ds
= 0V 1
G01A
V
gs(th)
Gate Threshold Voltage V
ds
= 10V, I
d
= 100ma 2 4 5 V
V
ds(on)
Drain-Source On Voltage V
gs
= 10V, I
d
= 3A 0.7 V
g
FS
Forward Transconductance V
ds
= 10V, I
d
= 3A 2.2 S
C
rss
Reverse Transfer Capacitance V
ds
= 28V, V
gs
= 0V, F = 1 MHz 5 pF
C
oss
Output Capacitance V
ds
= 28V, V
gs
= 0V, F = 1 MHz 60 pF
This part is input matched.
FUNCTIONAL CHARACTERISTICS @ 25 C
G
PS
Common Source Power Gain V
ds
= 28V, I
dq
= 0.6A,
F = 900MHz, P
out
= 120W
13 dB
h
d
Drain Efficiency V
ds
= 28V, I
dq
= 0.6A,
F = 900MHz, P
out
= 120W
50 %
IMD
3
Intermodulation Distortion,
3
rd
Order
V
ds
= 28V, I
dq
= 0.6A,
P
out
=120W PEP, F
1
= 900 MHz,
F
2
= 900.1 MHz
-30 dBc
Y Load Mismatch Vds = 28V, Idq = 0.6A,
F = 900MHz, P
out
= 120W
5:1