BC869 TRANSISTOR (PNP)

FEATURES
Power dissipation
P
CM:
500 mW (Tamb=25℃)
Collector current
I
CM:
-2 A
Collector-base voltage
V
(BR)CBO:
-32 V

Operating and storage junction temperature range
T
J
, T
stg
: -65℃ to +150℃
ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified)
Parameter Symbol Test conditions MIN MAX UNIT
Collector-base breakdown voltage V(BR)CBO Ic=-0.1mA, IE=0 -32 V
Collector-emitter breakdown voltage V(BR)CEO IC= -1mA , IB=0 -20 V
Emitter-base breakdown voltage V(BR)EBO IE=-0.1mA, IC=0 -5 V
Collector cut-off current ICBO VCB=-25V, IE=0 -0.1 µA
Emitter cut-off current IEBO VEB=-5V, IC=0 -0.1 µA
h
FE(1)

V
CE
=-10V, I
C
= -5mA
V
CE
=-1V, I
C
= -500mA
V
CE
=-1V, I
C
= -1A
50
100
60

375



DC current gain

BC869-16
BC869-25
h
FE(2)
V
CE
=-1V, I
C
= -500mA
100
160
250
375

Collector-emitter saturation voltage VCE(sat) IC=-1A, IB= -100mA 0.5 V
Transition frequency f
T

V
CE
=-5V, I
C
=-10mA
f = 100MHz
40 MHz

DEVICE MARKING BC869=CEC BC869-16=CGC BC869-25=CHC







SOT-89

1. BASE

2. COLLECTOR

3. EMITTER



BCP869

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