Symbol
V
DS
V
GS
I
DM
T
J
, T
STG
Symbol Typ Max
175 200
200 250
R
θJL
130 160
Absolute Maximum Ratings T
A
=25°C unless otherwise noted
Parameter Maximum Units
V
Gate-Source Voltage ±12 V
I
D
2.1
Drain-Source Voltage 30
T
A
=25°C
P
D
0.625
AT
A
=70°C 1.7
Pulsed Drain Current
B
10
Continuous Drain
Current
A
T
A
=25°C
Maximum Junction-to-Ambient
A
Steady-State
°C/W
W
T
A
=70°C 0.4
Junction and Storage Temperature Range -55 to 150 °C
Power Dissipation
A
Maximum Junction-to-Lead
C
Steady-State °C/W
Thermal Characteristics
Parameter Units
Maximum Junction-to-Ambient
A
t ≤ 10s
R
θJA
°C/W
AO7412
N-Channel Enhancement Mode Field Effect Transistor
Features
V
DS
(V) = 30V
I
D
= 2.1 A (V
GS
= 10V)
R
DS(ON)
< 90mΩ (V
GS
= 10V)
R
DS(ON)
< 100mΩ (V
GS
= 4.5V)
R
DS(ON)
< 160mΩ (V
GS
= 2.5V)
General Description
The AO7412 uses advanced trench technology to
provide excellent R
DS(ON)
, low gate charge and
operation with gate voltages as low as 2.5V, in the
small SOT323 footprint. It can be used for a wide
variety of applications, including load switching, low
current inverters and low current DC-DC converters.
Standard Product AO7412 is Pb-free (meets ROHS
& Sony 259 specifications). AO7412L is a Green
Product ordering option. AO7412 and AO7412L are
electrically identical.
G
D
S
SC-70-6
(SOT-323)
Top View
SG
D
D
D
D
Alpha Omega Semiconductor, Ltd.