5-23
0.5–12 GHz Low Noise
Gallium Arsenide FET
Technical Data
Features
• Low Noise Figure:
0.5 dB Typical at 4 GHz
• Low Bias:
V
DS
= 2 V, I
DS
␣ =␣ 20 mA
• High Associated Gain:
13.0 dB Typical at 4 GHz
• High Output Power:
20.0 dBm Typical P
1 dB

at 4 GHz
• Cost Effective Ceramic
Microstrip Package
• Tape-and Reel Packaging
Option Available
[1]
ATF-10136
36 micro-X Package
Electrical Specifications, T
A
= 25°C
Symbol Parameters and Test Conditions Units Min. Typ. Max.
NF
O
Optimum Noise Figure: V
DS
= 2 V, I
DS
= 25 mA f = 2.0 GHz dB 0.4
f = 4.0 GHz dB 0.5 0.6
f = 6.0 GHz dB 0.8
G
A
Gain @ NF
O
; V
DS
= 2 V, I
DS
= 25 mA f = 2.0 GHz dB 16.5
f = 4.0 GHz dB 12.0 13.0
f = 6.0 GHz dB 11.0
P
1 dB
Power Output @ 1 dB Gain Compression f = 4.0 GHz dBm 20.0
V
DS
= 4 V, I
DS
= 70 mA
G
1 dB
1 dB Compressed Gain: V
DS
= 4 V, I
DS
= 70 mA f = 4.0 GHz dB 12.0
g
m
Transconductance: V
DS
= 2 V, V
GS
= 0 V mmho 70 140
I
DSS
Saturated Drain Current: V
DS
= 2 V, V
GS
= 0 V m A 70 130 180
V
P
Pinchoff Voltage: V
DS
= 2 V, I
DS
= 1 mA V -4.0 -1.3 -0.5
Note:
1. Refer to PACKAGING section “Tape-and-Reel Packaging for Surface Mount Semiconductors.”
Description
The ATF-10136 is a high performance
gallium arsenide Schottky-barrier-
gate field effect transistor housed in a
cost effective microstrip package. Its
premium noise figure makes this
device appropriate for use in the first
stage of low noise amplifiers operat-
ing in the 0.5-12 GHz frequency range.
This GaAs FET device has a nominal
0.3 micron gate length using airbridge
interconnects between drain fingers.
Total gate periphery is 500 microns.
Proven gold based metallization
systems and nitride passivation
assure a rugged, reliable device.
5965-8701E