BSS89
器件描述：SIPMOS Small-Signal Transistor
器件厂商：INFINEON [Infineon Technologies AG]
文件大小：101.12KB，共7页
Sponsor by e络盟器件资料摘要：
Data Sheet 1 05.99
SIPMOS
®
Small-Signal Transistor
• N channel
• Enhancement mode
• Logic Level
• V
GS(th)
= 0.8...2.0V
Pin 1 Pin 2 Pin 3
G D S
Type V
DS
I
D
R
DS(on)
Package Marking
BSS 89 240 V 0.3 A 6 Ω TO-92 SS89
Type Ordering Code Tape and Reel Information
BSS 89 Q62702-S519 E6288
BSS 89 Q62702-S619 E6296
BSS 89 Q62702-S385 E6325
Maximum Ratings
Parameter Symbol Values Unit
Drain source voltage V
DS
240 V
Drain-gate voltage
R
GS
= 20 kΩ
V
DGR
240
Gate source voltage V
GS
± 20
ESD Sensitivity (HBM) as per MIL-STD 883 Class 1
Continuous drain current
T
A
= 25 ˚C
I
D
0.3
A
DC drain current, pulsed
T
A
= 25 ˚C
I
Dpuls
1.2
Power dissipation
T
A
= 25 ˚C
P
tot
1
W
BSS 89
SIPMOS
®
Small-Signal Transistor
• N channel
• Enhancement mode
• Logic Level
• V
GS(th)
= 0.8...2.0V
Pin 1 Pin 2 Pin 3
G D S
Type V
DS
I
D
R
DS(on)
Package Marking
BSS 89 240 V 0.3 A 6 Ω TO-92 SS89
Type Ordering Code Tape and Reel Information
BSS 89 Q62702-S519 E6288
BSS 89 Q62702-S619 E6296
BSS 89 Q62702-S385 E6325
Maximum Ratings
Parameter Symbol Values Unit
Drain source voltage V
DS
240 V
Drain-gate voltage
R
GS
= 20 kΩ
V
DGR
240
Gate source voltage V
GS
± 20
ESD Sensitivity (HBM) as per MIL-STD 883 Class 1
Continuous drain current
T
A
= 25 ˚C
I
D
0.3
A
DC drain current, pulsed
T
A
= 25 ˚C
I
Dpuls
1.2
Power dissipation
T
A
= 25 ˚C
P
tot
1
W
BSS 89