TECHNICAL DATA

NPN POWER SILICON TRANSISTOR
Qualified per MIL-PRF-19500/544
Devices Qualified Level
2N5152
2N5152L
2N5154
2N5154L




JAN
JANTX
JANTXV

MAXIMUM RATINGS
Ratings Symbol All Units Units
Collector - Emitter Voltage V CEO 80 Vdc
Colle ctor - Base Voltage V CBO 100 Vdc
Emitter - Base Voltage V EBO 5.5 Vdc
Collector Current I C (3, 4) 2.0 Adc
Total Power Dissipation @ T A = +25 0 C (1)
@ T C = +25 0 C (2) P T
1.0
11.8
W
W
Operating & Storage Temperature Range T j , T stg - 65 to +200 °C
THERMAL CHARACTERISTICS
Characteristics Symbol Max. Unit
Thermal Resistance, Junction - to - Case R θJC 15 0 C/W
1) Derate linearly 5.7 mW/ 0 C for T A > +25 0 C
2) Derate linearly 66.7 mW/ 0 C for T C > +25 0 C
3) Derate linearly 80 mW/ 0 C for T C > +25 0 C
4) This value applies for P W ≤ 8.3 ms, duty cycle ≤ 1%

TO - 5*
2N5152 L, 2N5154 L

2N5152 , 2N5154
TO - 39*
(TO - 205AD)
*See appendix A for package outline
ELECTRICAL CHARACTERISTICS (TA = 250C unless otherwise noted)
Characteristics Symbol Min. Max. Unit
OFF CHARACTERISTICS
Collector - Emitter Break down Voltage
I C = 100 mAdc, I B = 0 V ( BR ) CEO 80 Vdc
Emitter - Base Cutoff Current
V EB = 4.0 Vdc, I C = 0
V EB = 5.5 Vdc, I C = 0
I EBO 1.0 1.0 µAdc mAdc
Collector - Emitter Cutoff Current
V CE = 60 Vdc, V BE = 0
V CE = 100 Vdc, V BE = 0
I CES 1 .0 1.0 µAdc mAdc
Collector - Base Cutoff Current
V CE = 40 Vdc, I B = 0 I CEO 50 µAdc
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