GHz TECHNOLOGY INC. RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE. GHz RECOMMENDS THAT
BEFORE THE PRODUCT(S) DESCRIBED HEREIN ARE WRITTEN INTO SPECIFICATIONS, OR USED IN CRITICAL APPLICATIONS,
THAT THE PERFORMANCE CHARACTERISTICS BE VERIFIED BY CONTACTING THE FACTORY.
GHz Technology Inc. 3000 Oakmead Village Drive, Santa Clara, CA 95051-0808 Tel. 408 / 986-8031 Fax 408 / 986-8120
1014 - 12
12 Watt - 28 Volts, Class C
Microwave 1000 - 1400 MHz
GENERAL DESCRIPTION
The 1014-12 is a COMMON BASE transistor capable of providing 12 Watts
of Class C, RF output power over the band 1000-1400 MHz. This transistor is
designed for Microwave Broadband Class C amplifier applications. It includes
input prematching and utilizes gold metalization and diffused ballasting to
provide high reliability and supreme ruggedness.
CASE OUTLINE
55LT, STYLE 1
ABSOLUTE MAXIMUM RATINGS
Maximum Power Dissipation @ 25 C 39 Watts
o
Maximum Voltage and Current
BVces Collector to Emitter Voltage 50 Volts
BVebo Emitter to Base Voltage 3.5 Volts
Ic Collector Current 5.0 A
Maximum Temperatures
Storage Temperature - 65 to +150 C
o
Operating Junction Temperature +200 C
o

ELECTRICAL CHARACTERISTICS @ 25 C
O
SYMBOL CHARACTERISTICS TEST CONDITIONS MIN TYP MAX UNITS
Pout
Pin
Pg
η
c
VSWR
1
Power Out
Power Input
Power Gain
Collector Efficiency
Load Mismatch Tolerance
F = 1000-1400 MHz
Vcc = 28 Volts
Pin = 2.5 Watts
As Above
F = 1.4 GHz, Pin = 2.5 W
12
6.8
40
2.5
30:1
Watt
Watt
dB
%
BVces
BVebo
Icbo
h
FE
Cob
θjc
Collector to Emitter Breakdown
Emitter to Base Breakdown
Collector to Base Current
Current Gain
Output Capacitance
Thermal Resistance
Ic = 5 mA
Ie = 5 mA
Vcb = 28 Volts
Vce = 5 V, Ic = 200mA
F =1 MHz, Vcb = 28 V
50
3.5
10
12.0
3.0
4.5
Volts
Volts
mA
pF
C/W
o
Issue June 1996