 Semiconductor Components Industries, LLC, 2005
March, 2005 − Rev. 5
1 Publication Order Number:
BSS123LT1/D
BSS123LT1
Preferred Device
Power MOSFET
170 mAmps, 100 Volts
N−Channel SOT−23
Features
• Pb−Free Packages are Available
MAXIMUM RATINGS
Rating Symbol Value Unit
Drain−Source Voltage V
DSS
100 Vdc
Gate−Source Voltage
− Continuous
− Non−repetitive (t
p
≤ 50 s)
V
GS
V
GSM
±20
±40
Vdc
Vpk
Drain Current
− Continuous (Note 1)
− Pulsed (Note 2)
I
D
I
DM
0.17
0.68
Adc
Maximum ratings are those values beyond which device damage can occur.
Maximum ratings applied to the device are individual stress limit values (not
normal operating conditions) and are not valid simultaneously. If these limits
are exceeded, device functional operation is not implied, damage may occur
and reliability may be affected.
THERMAL CHARACTERISTICS
Characteristic Symbol Max Unit
Total Device Dissipation FR−5 Board
(Note 3) T
A
= 25°C
Derate above 25°C
P
D
225
1.8
mW
mW/°C
Thermal Resistance,
Junction−to−Ambient
R
JA
556 °C/W
Junction and Storage Temperature T
J
, T
stg
−55 to +150 °C
1. The Power Dissipation of the package may result in a lower continuous drain
current.
2. Pulse Width 300 s, Duty Cycle 2.0%.
3. FR−5 = 1.0 0.75 0.062 in.
3
1
2
N−Channel
SOT−23
CASE 318
STYLE 21
MARKING
DIAGRAM
SA
SA = Device Code
M = Date Code
PIN ASSIGNMENT
3
21
Drain
Gate
2
1
3
Source
170 mAMPS
100 VOLTS
R
DS(on)
= 6
Preferred devices are recommended choices for future use
and best overall value.
See detailed ordering and shipping information in the package
dimensions section on page 2 of this data sheet.
ORDERING INFORMATION
http://onsemi.com
M