A D V A N C E D S E M I C O N D U C T O R, I N C. REV. B
7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • (818) 982-1200 • FAX (818) 765-3004 1/1
Specifications are subject to change without notice.
CHARACTERISTICS TC = 25 °C

SYMBOL NONETEST CONDITIONS MINIMUM TYPICAL MAXIMUM UNITS
BV
CBO
I
C
= 100 mA 36 V
BV
CEO
I
C
= 100 mA 18
BV
EBO
I
E
= 25 mA 4.0 V
h
FE
V
CE
= 5.0 V I
C
= 1.0 A 10 200 ---
C
c
V
CB
= 15 V f = 1.0 MHz 130 160 pF
f
T
V
CE
= 10 V IC = 6.0 A 550 MHz
G
P

η
C

V
CC
= 12.5 V P
OUT
= 50 W f = 175 MHz
5.0
75


dB
%

NPN SILICON RF POWER TRANSISTOR
BLY90
DESCRIPTION:
The ASI BLY90 is Designed for
Class A,B and C, 12.5 V High Band
Applications up to 175 MHz.
FEATURES:
• Common Emitter
• P
G
= 5.0 dB at 50 W/175 MHz
• Omnigold™ Metalization System
MAXIMUM RATINGS
I
C
8.0 A
V
CBO
36 V
V
CEO
18 V
V
EBO
4.0 V
P
DISS
130 W @ T
C
= 25 °C
T
J
-65 °C to +200 °C
T
STG
-65 °C to +150 °C
θ
JC
1.35 °C/W
PACKAGE STYLE .380 4L STUD



















MINIMUM
inches / mm
.004 / 0.10
.370 / 9.40
.320 / 8.13
B
C
D
E
F
G
A
MAXIMUM
.385 / 9.78
.330 / 8.38
.130 / 3.30
.007 / 0.18
inches / mm
H .090 / 2.29 .100 / 2.54
DIM
.220 / 5.59 .230 / 5.84
.490 / 12.45.450 / 11.43
I
J
.155 / 3.94 .175 / 4.45
.750 / 19.05
.980 / 24.89
.100 / 2.54
E
F
D
ØC
B
.112x45°
G
H
J
I
A
#8-32 UNC-2A
C
B
E E