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厂商索引:A-B-C-D-E-F-G-H-I-J-K-L-M-N-O-P-Q-R-S-T-U-V-W-X-Y-Z

BLW75

器件描述:NPN SILICON RF POWER TRANSISTOR
器件厂商:ASI [Advanced Semiconductor]
文件大小:18.5KB,共1页
Sponsor by e络盟
器件资料摘要:
A D V A N C E D S E M I C O N D U C T O R, I N C. REV. A
7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • (818) 982-1200 • FAX (818) 765-3004 1/1
Specifications are subject to change without notice.
CHARACTERISTICS TC = 25
O
C
SYMBOL TEST CONDITIONS MINIMUM TYPICAL MAXIMUM UNITS
BV
CER
I
C
= 50 mA R
BE
= 10 Ω 60 V
BV
CBO
I
C
= 50 mA 60 V
BV
CEO
I
C
= 50 mA 30 V
BV
EBO
I
E
= 10 mA 4.0 V
h
FE
V
CE
= 25 V I
C
= 2.0 A 20 45 ---
C
ob
V
CB
= 30 V f = 1.0 MHz 90 120 pF
C
re
V
CE
= 30 V I
C
= 200 mA f = 1.0 MHz 55 pF
f
T
V
CE
= 25 V I
C
= 6.0 A f = 100 MHz 800 MHz
NPN SILICON RF POWER TRANSISTOR
BLW75
DESCRIPTION:
The ASI BLW75 is Designed for
25V Large-Signal Amplifier
Applications, TV Transposers, and
Transmitters Operating in Band lll.
MAXIMUM RATINGS
I
C
4.0 A
V
CE
32 V
V
CB
60 V
P
DISS
60 W @ T
C
= 25
O
C
T
J
-65
O
C to +200
O
C
T
STG
-65
O
C to +125
O
C
θ
JC
1.9
O
C/W
PACKAGE STYLE .380" 4L STUD (MOD STUD)
1 = COLLECTOR 2 & 4 = EMITTER
3 = BASE