COMSET SEMICONDUCTORS 1/4
BDY26, 183 T2
BDY27, 184 T2
BDY28, 185 T2
ABSOLUTE MAXIMUM RATINGS
Symbol Ratings Value Unit
BDY26, 183T2 180
BDY27, 184T2 200V
CEO
Collector-Emitter Voltage
BDY28, 185T2 250
V
BDY26, 183T2 300
BDY27, 184T2 400V
CBO
Collector-Base Voltage
BDY28, 185T2 500
V
V
EBO
Emitter-Base Voltage
BDY26, 183T2
BDY27, 184T2
BDY28, 185T2
10 V
I
C
Collector Current
BDY26, 183T2
BDY27, 184T2
BDY28, 185T2
6 A
I
B
Base Current
BDY26, 183T2
BDY27, 184T2
BDY28, 185T2
3 A
P
TOT
Power Dissipation @ T
C
= 25°
BDY26, 183T2
BDY27, 184T2
BDY28, 185T2
87.5 Watts
T
J
Junction Temperature
T
Stg
Storage Temperature
BDY26, 183T2
BDY27, 184T2
BDY28, 185T2
200
-65 to +200
°C
LF Large Signal Power Amplification
High Current Fast Switching
NPN SILICON TRANSISTORS, DIFFUSED MESA