BSS295
器件描述：SIPMOS Small-Signal Transistor
器件厂商：INFINEON [Infineon Technologies AG]
文件大小：99.81KB，共7页
Sponsor by e络盟器件资料摘要：
Data Sheet 1 05.99
SIPMOS
®
Small-Signal Transistor
• N channel
• Enhancement mode
• Logic Level
• V
GS(th)
= 0.8...2.0V
Pin 1 Pin 2 Pin 3
G D S
Type V
DS
I
D
R
DS(on)
Package Marking
BSS 295 50 V 1.4 A 0.3 Ω TO-92 SS 295
Type Ordering Code Tape and Reel Information
BSS 295 Q67000-S238 E6288
BSS 295 Q67000-S105 E6325
Maximum Ratings
Parameter Symbol Values Unit
Drain source voltage V
DS
50 V
Drain-gate voltage
R
GS
= 20 kΩ
V
DGR
50
Gate source voltage V
GS
± 20
ESD Sensitivity (HBM) as per MIL-STD 883 Class 1
Continuous drain current
T
A
= 24 ˚C
I
D
1.4
A
DC drain current, pulsed
T
A
= 25 ˚C
I
Dpuls
5.6
Power dissipation
T
A
= 25 ˚C
P
tot
1
W
BSS 295
SIPMOS
®
Small-Signal Transistor
• N channel
• Enhancement mode
• Logic Level
• V
GS(th)
= 0.8...2.0V
Pin 1 Pin 2 Pin 3
G D S
Type V
DS
I
D
R
DS(on)
Package Marking
BSS 295 50 V 1.4 A 0.3 Ω TO-92 SS 295
Type Ordering Code Tape and Reel Information
BSS 295 Q67000-S238 E6288
BSS 295 Q67000-S105 E6325
Maximum Ratings
Parameter Symbol Values Unit
Drain source voltage V
DS
50 V
Drain-gate voltage
R
GS
= 20 kΩ
V
DGR
50
Gate source voltage V
GS
± 20
ESD Sensitivity (HBM) as per MIL-STD 883 Class 1
Continuous drain current
T
A
= 24 ˚C
I
D
1.4
A
DC drain current, pulsed
T
A
= 25 ˚C
I
Dpuls
5.6
Power dissipation
T
A
= 25 ˚C
P
tot
1
W
BSS 295