General Description
The AAT8307 is a low threshold P Channel MOS-
FET designed for the battery, cell phone, and PDA
markets. Using AnalogicTech™'s proprietary ultra-
high density Trench technology, and space saving
small outline J-lead package, performance superi-
or to that normally found in a larger footprint has
been squeezed into the area of a TSOP6 package.
Applications
• Battery Packs
• Cellular & Cordless Telephones
• Battery-powered portable equipment
• Load Switches
Features
•V
DS(MAX)
= -20V
•I
D(MAX)
1
= -6.0A @ 25°C
• Low R
DS(ON)
:
• 35 mΩ @ V
GS
= -4.5V
• 60 mΩ @ V
GS
= -2.5V
TSOPJW-8 Package
DDDD
SSSG
Top View
1234
8765
AAT8307
20V P-Channel Power MOSFET
Absolute Maximum Ratings (T
A
=25°C unless otherwise noted)
Thermal Characteristics
Symbol Description Typ Max Units
R
θJA
Junction-to-Ambient steady state
1
90 110 °C/W
R
θJA2
Junction-to-Ambient t<5 seconds
1
48 59 °C/W
R
θJF
Junction-to-Foot
1
31 37 °C/W
Symbol Description Value Units
V
DS
Drain-Source Voltage -20
V
V
GS
Gate-Source Voltage ±12
I
D
Continuous Drain Current @ T
J
=150°C
1
T
A
= 25°C ±6.0
T
A
= 70°C ±4.8
A
I
DM
Pulsed Drain Current
2
±32
I
S
Continuous Source Current (Source-Drain Diode)
1
-1.9
P
D
Maximum Power Dissipation
1
T
A
= 25°C 2.1
W
T
A
= 70°C 1.3
T
J
, T
STG
Operating Junction and Storage Temperature Range -55 to 150 °C
Preliminary Information
8307.2003.06.0.62 1