EEWorld首页 新闻 论坛 博客 白皮书 专题 电子电路 电子器件 单片机 嵌入式 模拟电路 DSP FPGA 电源管理 手机/便携 医疗电子 汽车电子 工业控制
厂商索引:A-B-C-D-E-F-G-H-I-J-K-L-M-N-O-P-Q-R-S-T-U-V-W-X-Y-Z

ASIBLV33F

器件描述:NPN SILICON RF POWER TRANSISTOR
器件厂商:ASI [Advanced Semiconductor]
文件大小:23.68KB,共1页
Sponsor by e络盟
器件资料摘要:
A D V A N C E D S E M I C O N D U C T O R, I N C. REV. A
7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • (818) 982-1200 • FAX (818) 765-3004 1/1
Specifications are subject to change without notice.
CHARACTERISTICS TC = 25
O
C
SYMBOL NONETEST CONDITIONS MINIMUM TYPICAL MAXIMUM UNITS
BV
CEO
I
C
= 50 mA 35 V
BV
CER
I
C
= 50 mA R
BE
= 10 Ω 60 V
BV
EBO
I
E
= 10 mA 4.0 V
I
CES
V
E
= 28 V 5 mA
h
FE
V
CE
= 5.0 V I
C
= 1.0 A 10 100 ---
C
ob
V
CB
= 28 V f = 1.0 MHz 80 pF
G
PE
IMD
3
V
CE
= 25 V I
CQ
= 3.2 A f = 225 MHz
P
REF
= 16 W Vision = -8 dB Snd. = -7 dB
Side Band = -16 dB
13.5 14.5
-55
dB
dBc
NPN SILICON RF POWER TRANSISTOR
BLV33F
DESCRIPTION:
The ASI BLV33F is Designed for
Operation in Band III TV Transposers
and Transmitter Amplifiers from
170 to 230 MHz.
FEATURES:
• Gold Metalization
• Internal Input Matching
• Omnigold™ Metalization System
MAXIMUM RATINGS
I
C
10 A
V
CB
60 V
V
CE
35 V
P
DISS
140 W @ T
C
= 25
O
C
T
J
-65
O
C to +200
O
C
T
STG
-65
O
C to +150
O
C
θ
JC
1.5
O
C/W
PACKAGE STYLE .500 6L FLG
1 = COLLECTOR 2 = BASE
3 & 4 = EMITTER
ORDER CODE: ASI10493