ASI10832
器件描述:N-CHANNEL SILICON FET DEPLETION MODE
文件大小:15.77KB,共1页
Sponsor by e络盟
器件资料摘要:
A D V A N C E D S E M I C O N D U C T O R, I N C. REV. A
7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • (818) 982-1200 • FAX (818) 765-3004 1/1
Specifications are subject to change without notice.
CHARACTERISTICS TC = 25
O
C
NONE
SYMBOL TEST CONDITIONS MINIMUM TYPICAL MAXIMUM UNITS
I
GS
V
GS
= 10 V
T
C
= 150
O
C
100
100
pA
nA
I
DSS
V
DS
= 15 V V
GS
= 0 V 0.2 1.5 mA
V
GS
V
DS
= 15 V I
D
= 50 µA 0.1 1.0 V
V
(P)GS
V
DS
= 15 V I
D
= 500 pA 1.2 V
Iy
fs
I
Iy
os
I
V
DS
= 15 V V
GS
= 0 V
1500
10
µS
Iy
fs
I
Iy
os
I
V
DS
= 15 V I
D
= 200 µA f = 1.0 MHz
500
5.0
µS
C
iss
C
rs
V
DS
= 15 V f = 1.0 MHz
5.0
0.8
pF
V
n
V
DS
= 15 V I
D
= 200 µA BW = 0.6 to 100 Hz 500 nV
N-CHANNEL SILICON FET
DEPLETION MODE
BFW13
DESCRIPTION:
The ASI BFW13 is Designed for Low
Noise Video Amplifier Applications.
MAXIMUM RATINGS
I
D
10 mA
I
G
5.0 mA
V
DS
30 V
V
DG
30 V
V
GS
30 V
P
tot
150 mW @ T
A
= 110
O
C
T
J
-65
O
C to +200
O
C
T
STG
-65
O
C to +200
O
C
θ
JA
590
O
C/W
PACKAGE STYLE TO- 72
Order code: ASI10832
1 = SOURCE 2 = DRAIN
3 = GATE 4 = SHIELD