Symbol
V
DS
V
GS
I
DM
T
J
, T
STG
Symbol Typ Max
28 40
54 75
R
θJL
21 30
Junction and Storage Temperature Range
A
P
D
°C
3
2.1
-55 to 150
T
A
=70°C
I
D
-11
-9.7
-50Pulsed Drain Current
B
Power Dissipation
A
T
A
=25°C
Continuous Drain
Current
A
Maximum UnitsParameter
T
A
=25°C
T
A
=70°C
Absolute Maximum Ratings T
A
=25°C unless otherwise noted
V
V±25Gate-Source Voltage
Drain-Source Voltage -30
°C/W
Maximum Junction-to-Ambient
A
Steady-State
°C/W
W
Maximum Junction-to-Lead
C
Steady-State °C/W
Thermal Characteristics
Parameter Units
Maximum Junction-to-Ambient
A
t ≤ 10s
R
θJA
AO4433
P-Channel Enhancement Mode Field Effect Transistor
Features
V
DS
(V) = -30V
I
D
= -11 A (V
GS
= -20V)
R
DS(ON)
< 14mΩ (V
GS
= -20V)
R
DS(ON)
< 18mΩ (V
GS
= -10V)
ESD Rating: 1.5KV HBM
General Description
The AO4433 uses advanced trench technology to
provide excellent R
DS(ON)
, and ultra-low low gate
charge with a 25V gate rating. This device is suitable
for use as a load switch or in PWM applications. The
device is ESD protected. Standard product AO4433
is Pb-free (meets ROHS & Sony 259 specifications).
AO4433L is a Green Product ordering option.
AO4433 and AO4433L are electrically identical.
SOIC-8
Top View
G
S
S
S
D
D
D
D
D
S
G
Alpha & Omega Semiconductor, Ltd.