TECHNICAL DATA

NPN POWER SILICON TRANSISTOR
Qualified per MIL-PRF-19500/510
Devices Qualified Level
2N6249
2N6250 2N6251




JAN
JANTX
JANTXV
JANHC

MAXIMUM RATINGS
Ratings Symbol 2N6249 2N6250 2N6251 Units
Collector - Emitter Voltage V CEO 200 275 350 Vdc
Collector - Base Voltage V CBO 300 375 450 Vdc
Emitter - Base Voltage V EBO 6.0 Vdc
Collector Current I C 10 Adc
Base Current I B 5.0 Adc
Total Power Dissipation @ T A = +25 0 C (1)
@ T C = +25 0 C (2) P T
5.5
175
W
W
Operating & Storage Temp Range T op, T stg - 55 to +200 0 C
THERMAL CHARACTERISTICS
Characteristics Symbol Max. Unit
Thermal Resistance, Junction - to - Case R θJC 1.0 0 C/W
1) Derate linearly at 34.2 mW/ 0 C for T A > +25 0 C
2) Derate linearly at 1.0 W/ 0 C for T C > +25 0 C





TO-3 (TO-204AA)*
*See Appendix A for Package Outline
ELECTRICAL CHARACTERISTICS (TA = 250C unless otherwise noted)
Characteristics Symbol Min. Max. Unit
OFF CHARACTERISTICS
Collector - Emitter Breakdown Voltage
I C = 200 mAdc; L = 42 m H; F = 30 - 60 Hz 2N6249
(See Figure 3 of MIL - PRF - 19500/510) 2N6250
2N6251
V (BR) CEO 200 275
350
Vdc
Collector - Emitter Breakdown Voltage
I C = 200 mAdc; L = 14 mH; F = 30 - 60 Hz; R BE = 50 Ω
(See Figure 3 of MIL - PRF - 19500/510) 2N6249
2N6250
2N6251
V (BR) CER 225
300
375
Vdc
Emitter - Base Cutoff Current
V EB = 6 Vdc I EBO 100 µAdc
Collector - Emitter Cutoff Current
V CE = 150 Vdc 2N6249
V CE = 225 Vdc 2N6250
V CE = 300 Vdc 2N6251
I CEO 1.0 1.0
1.0
mAdc

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