Power Transistors
1
Publication date: July 2004 SJD00319AED
2SC5954
Silicon NPN triple diffusion planar type
For power amplification with high forward current transfer ratio
■ Features
• High forward current transfer ratio h
FE
which has satisfactory linearity.
• Low collector-emitter saturation voltage V
CE(sat)
• Full-pack package which can be installed to the heat sink with one
screw.
■ Absolute Maximum Ratings T
C
= 25°C
■ Electrical Characteristics T
C
= 25°C ± 3°C
1.4±0.2
1.6±0.2
0.8±0.1 0.55±0.15
2.54±0.30
5.08±0.50
123
2.6±0.1
2.9±0.2
4.6±0.2
φ 3.2±0.1
3.0
±
0.5
9.9±0.3
15.0
±
0.5
13.7
±
0.2
4.2
±
0.2
Solder Dip
Unit: mm
1: Base
2: Collector
3: Emitter
TO-220D-A1 Package
Parameter Symbol Rating Unit
Collector-base voltage (Emitter open) V
CBO
80 V
Collector-emitter voltage (Base open) V
CEO
60 V
Emitter-base voltage (Collector open) V
EBO
6V
Collector current I
C
3A
Peak collector current I
CP
6A
Collector power dissipation P
C
25 W
T
a
= 25°C 2.0
Junction temperature T
j
150 °C
Storage temperature T
stg
−55 to +150 °C
Parameter Symbol Conditions Min Typ Max Unit
Collector-emitter voltage (Base open) V
CEO
I
C
= 10 mA, I
B
= 060V
Collector-base cutoff current (Emitter open) I
CBO
V
CB
= 80 V, I
E
= 0 100 µA
Collector-emitter cutoff current (Base open) I
CEO
V
CE
= 40 V, I
B
= 0 100 µA
Emitter-base cutoff current (Collector open) I
EBO
V
EB
= 6 V, I
C
= 0 100 µA
Forward current transfer ratio h
FE1

*
V
CE
= 4 V, I
C
= 0.5 A 500 2 300 
h
FE2
V
CE
= 4 V, I
C
= 3 A 100
Collector-emitter saturation voltage V
CE(sat)
I
C
= 1 A, I
B
= 20 mA 0.6 V
Transition frequency f
T
V
CE
= 10 V, I
C
= 0.1 A, f = 10 MHz 200 MHz
Turn-on time t
on
I
C
= 1 A, Resistance loaded 0.2 µs
Storage time t
stg
I
B1
= 0.1 A, I
B2
= − 0.1 A 1.5 µs
Fall time t
f
V
CC
= 50 V 0.1 µs
Rank Q P
h
FE1
500 to 1 500 1 300 to 2 300
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2.
*
: Rank classification
Internal Connection
B
C
E