A D V A N C E D S E M I C O N D U C T O R, I N C. REV. A
7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • (818) 982-1200 • FAX (818) 765-3004 1/1
Specifications are subject to change without notice.
MINIMUM
inches / mm
.490 / 12.45
.210 / 5.33
.003 / 0.08
B
C
D
E
F
G
A
MAXIMUM
.220 / 5.59
.007 / 0.18
.510 / 12.95
inches / mm

.725 / 18.42
H
DIM
K
L
I
J .970 / 24.64 .980 / 24.89
.170 / 4.32
N
M
.120 / 3.05 .135 / 3.43
.150 / 3.43 .160 / 4.06
.125 / 3.18
.090 / 2.29 .105 / 2.67
.285 / 7.24
.150 / 3.81

.045 / 1.14
E
F
.725/18,42
I
G
J
K
L
M
A
D
C
B
2x ØN
FULL R
H
.835 / 21.21 .865 / 21.97
.210 / 5.33.200 / 5.08
CHARACTERISTICS TC = 25 °C

SYMBOL NONETEST CONDITIONS MINIMUM TYPICAL MAXIMUM UNITS
BV
CEO
I
C
= 50 mA 30 V
BV
CBO
I
C
= 50 mA 60 V
BV
EBO
I
E
= 10 mA 4.0 V
I
CBO
V
CB
= 30 V 5.0 mA
h
FE
V
CE
= 5.0 V I
C
= 2.0 A 20 80 ---
C
OB
V
CB
= 28 V f = 1.0 MHz 80 pF
P
G
P
OUT
V
CC
= 28 V P
IN
= 70 W f = 400 MHz
8.4
70


dB
W

NPN SILICON RF POWER TRANSISTOR
SRF820H
DESCRIPTION:
The ASI SRF820H is Designed for
High Power Class C Amplifier
applications, in 225 to 400 MHz
Military Communication Equipment.
FEATURES:
• Internal Input Matching Network
• P
G
= 8.4 dB at 70 W/400 MHz
• Omnigold™ Metalization System
• Available in matched pairs and
quads
MAXIMUM RATINGS
I
C
8.0 A
V
CBO
60 V
V
CEO
30 V
V
EBO
4.0 V
P
DISS
220 W @ T
C
= 25 °C
T
J
-65 °C to +200 °C
T
STG
-65 °C to +150 °C
θ
JC
1.25 °C/W
PACKAGE STYLE .500 6L FLG






























1 = COLLECTOR 2 = BASE 3 & 4 = EMITTER
ORDER CODE: ASI10474
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