AAT9060
30V N-Channel Power MOSFET
Preliminary Information
9060.2003.05.0.9 1
PWMSwitch
™
General Description
The AAT9060 30V N-Channel Power MOSFET is a
member of AnalogicTech™'s TrenchDMOS™
product family. Using the ultra-high density propri-
etary TrenchDMOS technology, this product
demonstrates high power handling and small size.
Applications
• DC-DC converters
• High current load switches
• LDO output
Features
•V
DS(MAX)
= 30V
•I
D(MAX)
1
= 39A @ T
C
= 25°C
•I
APP(MAX)
= 12.5A in typical computer application
• Low R
DS(ON)
:
• 16 mΩ @V
GS
= 10V
• 27 mΩ @V
GS
= 4.5V
DPAK Package
GS
Drain-Connected Tab
Absolute Maximum Ratings (T
C
=25°C unless otherwise noted)
Thermal Characteristics
Symbol Description Value Units
R
θJA
Maximum Junction-to-Ambient 96 °C/W
R
TYP
Typical Junction to ambient on PC board
2
24 °C/W
R
θJC
Maximum Junction-to-Case 3 °C/W
Symbol Description Value Units
V
DS
Drain-Source Voltage 30
V
V
GS
Gate-Source Voltage ±20
I
D
Continuous Drain Current @ T
J
=150°C
1
T
C
= 25°C ±39
T
C
= 70°C ±31
I
DM
Pulsed Drain Current
3
±60
A
I
S
Continuous Source Current (Source-Drain Diode)
1
20
P
D
Maximum Power Dissipation
1
T
C
= 25°C 41
W
T
C
= 70°C 26
T
J
, T
STG
Operating Junction and Storage Temperature Range -55 to 150 °C