AAT7103
25V N-Channel Power MOSFET
Preliminary Information
7103.2003.04.0.61 1
General Description
The AAT7103 25V N-Channel Power MOSFET is a
member of AnalogicTech™'s TrenchDMOS™
product family. Using the ultra-high density propri-
etary TrenchDMOS technology, the product
demonstrates high power handling and small size.
Applications
• Battery Packs
• Cellular & Cordless Telephones
• PDAs, Camcorders, and Cell Phones
Features
•V
DS(MAX)
= 25V
•I
D(MAX)
(1)
= 6.8 A @ 25°C
• Low R
DS(ON)
:
• 26 mΩ @V
GS
= 4.5V
• 41 mΩ @V
GS
= 2.5V
Dual SOP-8 Package
D1 D1 D2 D2
S1 G1 S2 G2
Top View
1234
8765
Absolute Maximum Ratings (T
A
=25°C unless otherwise noted)
Thermal Characteristics
Symbol Description Value Units
R
θJA
Typical Junction-to-Ambient steady state, one FET on
2
100 °C/W
R
θJA2
Maximum Junction-to-Ambient Figure, t < 10 sec.
1
62.5 °C/W
R
θJF
Typical Junction-to-Foot, one FET on
1
35 °C/W
Symbol Description Value Units
V
DS
Drain-Source Voltage 25
V
V
GS
Gate-Source Voltage ±12
I
D
Continuous Drain Current @ T
J
=150°C
1
T
A
= 25°C ±6.8
T
A
= 70°C ±5.4
I
DM
Pulsed Drain Current
3
±24
A
I
S
Continuous Source Current (Source-Drain Diode)
1
1.8
P
D
Maximum Power Dissipation
1
T
A
= 25°C 2.0
W
T
A
= 70°C 1.25
T
J
, T
STG
Operating Junction and Storage Temperature Range -55 to 150 °C