BFP620F E7764
Oct-20-2003
1
NPN Silicon Germanium RF Transistor
Preliminary data
• High gain low noise RF transistor
• Small package 1.4 x 0.8 x 0.59 mm
• Outstanding noise figure F = 0.7 dB at 1.8 GHz
Outstanding noise figure F = 1.3 dB at 6 GHz
• Maximum stable gain
G
ms
= 21 dB at 1.8 GHz
G
ma
= 10 dB at 6 GHz
• Gold metallization for extra high reliability
TSFP-4
1
2
4
3
XYs
G41 G43 G73
G31 G32
G33G34
G64 G69 G72 G65 G63 G74 G69 G6F G6E G20 G6F G66 G20 G75 G6E G72 G65 G65 G6C G69 G6E G67
G74 G6F G70 G20 G76 G69 G65 G77
ESD: Electrostatic discharge sensitive device, observe handling precaution!
Type Marking Pin Configuration Package
BFP620F E7764 R2s
1=B 2=E 3=C 4=E - - TSFP-4
Maximum Ratings
Parameter Symbol Value Unit
Collector-emitter voltage V
CEO
2.3 V
Collector-emitter voltage V
CES
7.5
Collector-base voltage V
CBO
7.5
Emitter-base voltage V
EBO
1.2
Collector current I
C
80 mA
Base current I
B
3
Total power dissipation
1)

T
S
≤ 96°C
P
tot
185 mW
Junction temperature T
j
150 °C
Ambient temperature T
A
-65 ... 150
Storage temperature T
stg
-65 ... 150
Thermal Resistance
Parameter Symbol Value Unit
Junction - soldering point
2)
R
thJS
≤ 290
K/W
1
T
S
is measured on the collector lead at the soldering point to the pcb
2
For calculation of R
thJA
please refer to Application Note Thermal Resistance