Transistors
1
Publication date: June 2004 SJC00307AED
2SD2621
Silicon NPN epitaxial planar type
For low-frequency driver amplification
■ Features
• High forward current transfer ratio h
FE
• Low collector-emitter saturation voltage V
CE(sat)
• High emitter-base voltage (Collector open) V
EBO
■ Absolute Maximum Ratings T
a
= 25°C
Parameter Symbol Rating Unit
Collector-base voltage (Emitter open) V
CBO
100 V
Collector-emitter voltage (Base open) V
CEO
100 V
Emitter-base voltage (Collector open) V
EBO
15 V
Collector current I
C
20 mA
Peak collector current I
CP
50 mA
Collector power dissipation P
C
100 mW
Junction temperature T
j
125 °C
Storage temperature T
stg
−55 to +125 °C
Parameter Symbol Conditions Min Typ Max Unit
Collector-base voltage (Emitter open) V
CBO
I
C
= 10 µA, I
E
= 0 100 V
Collector-emitter voltage (Base open) V
CEO
I
C
= 1 mA, I
B
= 0 100 V
Emitter-base voltage (Collector open) V
EBO
I
E
= 10 µA, I
C
= 015
Collector-base cutoff current (Emitter open) I
CBO
V
CB
= 60 V, I
E
= 0 0.1 µA
Collector-emitter cutoff current (Base open) I
CEO
V
CE
= 60 V, I
B
= 0 1.0 µA
Forward current transfer ratio h
FE
V
CE
= 10 V, I
C
= 2 mA 400 1 200 
Collector-emitter saturation voltage V
CE(sat)
I
C
= 10 mA, I
B
= 1 mA 0.05 0.20 V
Transition frequency f
T
V
CB
= 10 V, I
E
= −2 mA, f = 200 MHz 200 MHz
Noise voltage NV V
CE
= 10 V, I
C
= 1 mA, G
V
= 80 dB 80 mV
R
g
= 100 kΩ, Function = FLAT
■ Electrical Characteristics T
a
= 25°C ± 3°C
Unit: mm
Note) Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
Marking Symbol: 3B
1.20
±
0.05
0.52
±
0.03
0 to 0.01
0.15 max.
5˚
0.15 min.
0.80
±
0.05
0.15 min.
0.33
(0.40)(0.40)
12
3
5˚
0.80±0.05
1.20±0.05
+0.05
–0.02
0.10
+0.05
–0.02
0.23
+0.05
–0.02
1 : Base
2 : Emitter
3 : Collector SSSMini3-F1 Package