2SK3437
2004-07-06 1
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π-MOSV)
2SK3437

DC-DC Converter, Relay Drive and Motor Drive
Applications


• Low drain-source ON resistance: RDS (ON) = 0.74 Ω (typ.)
• High forward transfer admittance: |Yfs| = 4.5 S (typ.)
• Low leakage current: IDSS = 100 µA (max) (VDS = 600 V)
• Enhancement mode: Vth = 3.0~5.0 V (VDS = 10 V, ID = 1 mA)

Maximum Ratings (Ta = 25°C)
Characteristics Symbol Rating Unit
Drain-source voltage V
DSS
600 V
Drain-gate voltage (R
GS
= 20 kΩ) V
DGR
600 V
Gate-source voltage V
GSS
±30 V
DC (Note 1) I
D
10
Drain current
Pulse
(Note 1)
I
DP
30
A
Drain power dissipation (Tc = 25°C) P
D
80 W
Single pulse avalanche energy
(Note 2)
E
AS
252 mJ
Avalanche current I
AR
10 A
Repetitive avalanche energy (Note 3) E
AR
8 mJ
Channel temperature T
ch
150 °C
Storage temperature range T
stg
−55~150 °C

Thermal Characteristics
Characteristics Symbol Max Unit
Thermal resistance, channel to case R
th (ch-c)
1.56 °C/W
Thermal resistance, channel to ambient R
th (ch-a)
83.3 °C/W
Note 1: Ensure that the channel temperature does not exceed 150°C.
Note 2: V
DD
= 90 V, T
ch
= 25°C (initial), L = 4.41 mH, R
G
= 25 Ω,
I
AR
= 10 A
Note 3: Repetitive rating: Pulse width limited by maximum channel
temperature
This transistor is an electrostatic-sensitive device. Please handle with
caution.


Unit: mm


JEDEC ―
JEITA ―
TOSHIBA 2-10S1B
Weight: 1.5 g (typ.)


JEDEC ―
JEITA ―
TOSHIBA 2-10S2B
Weight: 1.5 g (typ.)