 Semiconductor Components Industries, LLC, 2004
January, 2004 − Rev. 3
1 Publication Order Number:
BC856BDW1T1/D
BC856BDW1T1,
BC857BDW1T1 Series,
BC858BDW1T1 Series
Preferred Devices
Dual General Purpose
Transistors
PNP Duals
These transistors are designed for general purpose amplifier
applications. They are housed in the SOT−363/SC−88 which is
designed for low power surface mount applications.
• Device Marking:
BC856BDW1T1 = 3B
BC857BDW1T1 = 3F
BC857CDW1T1 = 3G
BC858BDW1T1 = 3K
BC858CDW1T1 = 3L
MAXIMUM RATINGS
Rating Symbol BC856 BC857 BC858 Unit
Collector−Emitter Voltage V
CEO
−65 −45 −30 V
Collector−Base Voltage V
CBO
−80 −50 −30 V
Emitter−Base Voltage V
EBO
−5.0 −5.0 −5.0 V
Collector Current −
Continuous
I
C
−100 −100 −100 mAdc
THERMAL CHARACTERISTICS
Characteristic Symbol Max Unit
Total Device Dissipation
Per Device
FR−5 Board (Note 1)
T
A
= 25°C
Derate Above 25°C
P
D
380
250
3.0
mW
mW/°C
Thermal Resistance,
Junction to Ambient
R
JA
328 °C/W
Junction and Storage
Temperature Range
T
J
, T
stg
−55 to +150 °C
1. FR−5 = 1.0 x 0.75 x 0.062 in
Device Package Shipping
†
ORDERING INFORMATION
BC857BDW1T1 SOT−363
SOT−363/SC−88
CASE 419B
Style 1
3000 Units/Reel
DEVICE MARKING
Preferred devices are recommended choices for future use
and best overall value.
BC857CDW1T1 SOT−363 3000 Units/Reel
BC858BDW1T1 SOT−363 3000 Units/Reel
BC858CDW1T1 SOT−363 3000 Units/Reel
3xm
See Table
Q
1
(1)(2)(3)
(4) (5) (6)
Q
2
1
2
3
6
5
4
BC856BDW1T1 SOT−363 3000 Units/Reel
3x = Specific Device Code
x = B, F, G, K, L
M = Date Code
http://onsemi.com
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.