SOT23 PNP SILICON PLANAR
GENERAL PURPOSE TRANSISTORS
ISSUE 6 - APRIL 1997
PARTMARKING DETAILS COMPLEMENTARY TYPES
BC856A 3A BC858C 3L BC856 BC846
BC856B Z3B BC859A Z4A BC857 BC847
BC857A Z3E BC859B 4B BC858 BC848
BC857B 3F BC859C Z4C BC859 BC849
BC857C 3G BC860A Z4E BC860 BC850
BC858A 3J BC860B 4F
BC858B 3K BC860C 4GZ
ABSOLUTE MAXIMUM RATINGS.
PARAMETER SYMBOL BC856 BC857 BC858 BC859 BC860 UNIT
Collector-Base Voltage V
CBO
-80 -50 -30 -30 -50 V
Collector-Emitter Voltage V
CES
-80 -50 -30 -30 -50 V
Collector-Emitter Voltage V
CEO
-65 -45 -30 -30 -45 V
Emitter-Base Voltage V
EBO
-5 V
Continuous Collector Current I
C
-100 mA
Peak Pulse Current I
EM
-200 mA
Base Current I
BM
-200 mA
Base Current I
EM
-200 mA
Power Dissipation at T
amb
=25 C P
tot
330 mW
Operating and Storage
Temperature Range
T
j
:T
stg
-55 to +150 C
ELECTRICAL CHARACTERISTICS (at T
amb
= 25 C unless otherwise stated).
PARAMETER SYMBOL BC856 BC857 BC858 BC859 BC860 UNIT CONDITIONS.
Collector Cut-Off Current I
CBO
Max -15 nA V
CB
= -30V
Max -4 µA V
CB
= -30V
Tamb=150 C
Collector-Emitter
Saturation Voltage
V
CE(sat)
Typ
Max.
-75
-300
-75
-300
-75
-300
-75
-250
-75
-250
mV I
C
=-10mA,
I
B
=-0.5mA
Typ
Max.
-250
-650
mV I
C
=-100mA,
I
B
=-5mA
Typ
Max.
-300
-600
mV I
C
=-10mA*
Base-Emitter
Saturation Voltage
V
BE(sat) Typ
-700 mV I
C
=-10mA,
I
B
=-0.5mA
Typ
-850 mV I
C
=-100mA,
I
B
=-5mA
Base-Emitter Voltage V
BE Min
Typ
Max
-600
-650
-750
-600
-650
-750
-600
-650
-750
-580
-650
-750
-580
-650
-750
mV I
C
=-2mA
V
CE
=-5V
Max
-820 mV I
C
=-10mA
V
CE
=-5V
* Collector-Emitter Saturation Voltage at I
C
= 10mA for the characteristics going through the
operating point I
C
= 11mA, V
CE
= 1V at constant base current.
BC856 BC857
BC858 BC859
BC860
C
B
E
SOT23