SOT23 NPN SILICON PLANAR
GENERAL PURPOSE TRANSISTORS
ISSUE 6 - JANUARY 1997
PARTMARKING DETAILS COMPLEMENTARY TYPES
BC846A Z1A BC848B 1K BC846 BC856
BC846B 1B BC848C Z1L BC847 BC857
BC847A Z1E BC849B 2B BC848 BC858
BC847B 1F BC849C 2C BC849 BC859
BC847C 1GZ BC850B 2FZ BC850 BC860
BC848A 1JZ BC850C-Z2G
ABSOLUTE MAXIMUM RATINGS.
PARAMETER SYMBOL BC846 BC847 BC848 BC849 BC850 UNIT
Collector-Base Voltage V
CBO
80 50 30 30 50 V
Collector-Emitter Voltage V
CES
80 50 30 30 50 V
Collector-Emitter Voltage V
CEO
65 45 30 30 45 V
Emitter-Base Voltage V
EBO
Continuous Collector Current I
C
100 mA
Peak Collector Current I
CM
200 mA
Peak Base Current I
BM
200 mA
Peak Emitter Current I
EM
200 mA
Power Dissipation at T
amb
=25 C P
tot
330 mW
Operating and Storage
Temperature Range
T
j
:T
stg
-55 to +150 C
ELECTRICAL CHARACTERISTICS (at T
amb
= 25 C unless otherwise stated).
PARAMETER SYMBOL BC846 BC847 BC848 BC849 BC850 UNIT CONDITIONS.
Collector Cut-Off Current I
CBO
Max 15 nA V
CB
= 30V
Max 5 µA V
CB
= 30V
T
amb
=150 C
Collector-Emitter
Saturation Voltage
V
CE(sat)
Typ
Max.
90
250
mV
mV
I
C
=10mA,
I
B
=0.5mA
Typ
Max.
200
600
mV
mV
I
C
=100mA,
I
B
=5mA
Typ
Max.
300
600
mV
mV
I
C
=10mA*
Base-Emitter
Saturation Voltage
V
BE(sat) Typ
700 mV I
C
=10mA,
I
B
=0.5mA
Typ
900 mV I
C
=100mA,
I
B
=5mA
Base-Emitter Voltage V
BE Min
Typ
Max
580
660
700
mV
mV
mV
I
C
=2mA
V
CE
=5V
Max
770 mV I
C
=10mA
V
CE
=5V
* Collector-Emitter Saturation Voltage at I
C
= 10mA for the characteristics going through the
operating point I
C
= 11mA, V
CE
= 1V at constant base current.
BC846 BC847
BC848 BC849
BC850
C
B
E
SOT23