1N5709B
器件描述:ABRUPT VARACTOR DIODE
文件大小:17.39KB,共1页
Sponsor by e络盟
器件资料摘要:
A D V A N C E D S E M I C O N D U C T O R, I N C. REV. A
7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • (818) 982-1202 • FAX (818) 765-3004 1/1
Specifications are subject to change without notice.
CHARACTERISTICS TC = 25 °C
NONE
SYMBOL TEST CONDITIONS MINIMUM TYPICAL MAXIMUM UNITS
V
BR
I
R
= 10 µA 65 V
I
R
V
R
= 60 V
T
A
= 150 °C
20
20
nA
µA
C
T
V
R
= 4.0 V f = 1.0 MHz 77.9 86.1 pF
C
T4
/C
T60
V
R
= 4.0 V/V
R
= 60 V f = 1.0 MHz 3.2 3.4 --
Q V
R
= 4.0 V f = 50 MHz 150 --
ABRUPT VARACTOR DIODE
1N5709B
DESCRIPTION:
The ASI 1N5709B is an Abrupt Varactor
Diode, designed for general purpose
applications.
MAXIMUM RATINGS
I
R
20 nA
V
R
70 V
P
DISS
400 mW @ T
A
= 25 °C
T
J
-65 °C to +175 °C
T
STG
-65 °C to +200 °C
θ
JC
250 °C/W
PACKAGE STYLE DO-7