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THE PRODUCT(S) DESCRIBED HEREIN ARE WRITTEN INTO SPECIFICATIONS, OR USED IN CRITICAL APPLICATIONS, THAT THE
PERFORMANCE CHARACTERISTICS BE VERIFIED BY CONTACTING THE FACTORY.
GHz Technology Inc. 3000 Oakmead Village Drive, Santa Clara, CA 95051-0808 Tel. 408 / 986-8031 Fax 408 / 986-8120
23A008
0.5 Watts, 20 Volts, Class A
Linear to 2300 MHz
GENERAL DESCRIPTION CASE OUTLINE
The 23A008 is a COMMON EMITTER transistor capable of providing up to
0.5 Watts of Class A, RF output power to 2300 MHz. This transistor is
specifically designed for general Class A amplifier applications. It utilizes
gold metalization and diffused ballasting to provide high reliability and
supreme ruggedness. The transistor uses a fully hermetic High Temperature
Solder Sealed package.
55BT, STYLE 2
ABSOLUTE MAXIMUM RATINGS
Maximum Power Dissipation @ 25 C 5.0 Watts
o
Maximum Voltage and Current
BVces Collector to Emitter Voltage 50 Volts
BVebo Emitter to Base Voltage 3.5 Volts
Ic Collector Current 400 mA
Maximum Temperatures
Storage Temperature - 65 to + 200 C
o
Operating Junction Temperature + 200 C
o

ELECTRICAL CHARACTERISTICS @ 25 C
O
SYMBOL CHARACTERISTICS TEST CONDITIONS MIN TYP MAX UNITS
Pout
Pin Power Input Ic = 140 mA .142 Watts
Pg
Ft
VSWR
Power Out F = 2.3 GHz .8 1.0 Watts
Power Gain Vcc = 20 Volts 8.5 9.5 dB
Transition Frequency Vce = 20V, Ic =140 mA 3.4 3.7 GHz
Load Mismatch Tolerance 10:1
BVebo
BVces Collector to Emitter Breakdown Ic = 10 mA 50 Volts
BVceo
h
FE
Cob
θjc
Emitter to Base Breakdown Ie = 1 mA 3.5 Volts
Collector to Emitter Breakdown Ic = 10 mA 22 Volts
DC Current Gain Vce = 5 V, Ic = 100 mA 20
Capacitance Vcb = 28V, f = 1 MHz 3.0 pF
C/W
Thermal Resistance 30 35 o
Issue August 1996