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厂商索引:A-B-C-D-E-F-G-H-I-J-K-L-M-N-O-P-Q-R-S-T-U-V-W-X-Y-Z

BAS16HT1

器件描述:Switching Diode
器件厂商:ONSEMI [ON Semiconductor]
厂商主页:http://www.onsemi.com
文件大小:41.52KB,共4页
Sponsor by e络盟
器件资料摘要:
 Semiconductor Components Industries, LLC, 2004
February, 2004 − Rev. 3
1 Publication Order Number:
BAS16HT1/D
BAS16HT1
Preferred Device
Switching Diode
MAXIMUM RATINGS
Rating Symbol Value Unit
Continuous Reverse Voltage V
R
75 Vdc
Peak Forward Current I
F
200 mAdc
Peak Forward Surge Current I
FM(surge)
500 mAdc
THERMAL CHARACTERISTICS
Characteristic Symbol Max Unit
Total Device Dissipation FR-5 Board (Note 1)
T
A
= 25°C
Derate above 25°C
P
D
200
1.57
mW
mW/°C
Thermal Resistance Junction to Ambient R
θJA
635 °C/W
Junction and Storage Temperature T
J
, T
stg
−55 to
150
°C
1. FR-4 Minimum Pad.
ELECTRICAL CHARACTERISTICS (T
A
= 25°C unless otherwise noted)
Characteristic Symbol Min Max Unit
OFF CHARACTERISTICS
Reverse Voltage Leakage Current
(V
R
= 75 Vdc)
(V
R
= 75 Vdc, T
J
= 150°C)
(V
R
= 25 Vdc, T
J
= 150°C)
I
R



1.0
50
30
µAdc
Reverse Breakdown Voltage
(I
BR
= 100 µAdc)
V
(BR)
75 − Vdc
Forward Voltage
(I
F
= 1.0 mAdc)
(I
F
= 10 mAdc)
(I
F
= 50 mAdc)
(I
F
= 150 mAdc)
V
F




715
855
1000
1250
mV
Diode Capacitance
(V
R
= 0, f = 1.0 MHz)
C
D
− 2.0 pF
Forward Recovery Voltage
(I
F
= 10 mAdc, t
r
= 20 ns)
V
FR
− 1.75 Vdc
Reverse Recovery Time
(I
F
= I
R
= 10 mAdc, R
L
= 50 Ω)
t
rr
− 6.0 ns
Stored Charge
(I
F
= 10 mAdc to V
R
= 5.0 Vdc,
R
L
= 500 Ω)
Q
S
− 45 pC
http://onsemi.com
SOD−323
CASE 477
STYLE 1
MARKING DIAGRAM
Preferred devices are recommended choices for future use
and best overall value.
1
CATHODE
2
ANODE
A6 = Specific Device Code
M = Date Code
Device Package Shipping†
ORDERING INFORMATION
BAS16HT1 SOD−323 3000/Tape & Reel
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
1
2
A6 M