07/2003
AWT6134
KPCS/CDMA 3.4V/28dBm
Linear Power Amplifier Module
PRELIMINARY DATA SHEET - Rev 1.0
M7 Package
10 Pin 4mm x 4mm
Surface Mount Module
Figure 1: Block Diagram
Bias Control
VCC
VREF
RFIN
RFOUT
GND
VMODE
1
7
5
8
10
6
GND at slug (pad)
3
9
4
2
GND
VCC
GND
GND
ruggedness. Selectable bias modes that optimize
efficiency for different output power levels, and a
shutdown mode with low leakage current, increase
handset talk and standby time. The self-contained
4mm x 4mm surface mount package incorporates
matching networks optimized for output power,
efficiency, and linearity in a 50 Ω system.
FEATURES
• InGaP HBT Technology
• High Efficiency: 39%
• Low Quiescent Current: 48 mA
• Low Leakage Current in Shutdown Mode: <1 µA
•VREF = +2.8 V (+2.7 V min over temp)
• Optimized for a 50 Ω System
• Low Profile Miniature Surface Mount Package:
1.56mm Max
• CDMA 1XRTT Compliant
• CDMA 1xEV-DO Compliant
APPLICATIONS
• Korean PCS CDMA Wireless Handsets
PRODUCT DESCRIPTION
The AWT6134 meets the increasing demands for
higher efficiency and linearity in CDMA 1XRTT
handsets. The PA module is optimized for VREF = +2.8 V,
a requirement for compatibility with the Qualcomm
6000 chipset. The device is manufactured on an
advanced InGaP HBT MMIC technology offering
state-of-the-art reliability, temperature stability, and