1. General description
The 74AHC1G09 is a high-speed Si-gate CMOS device.
The 74AHC1G09 provides the 2-input AND function with open-drain output.
The output of the 74AHC1G09 is an open drain and can be connected to other open-drain
outputs to implement active-LOW, wired-OR or active-HIGH wired-AND functions. For
digital operation this device must have a pull-up resistor to establish a logic HIGH level.
2. Features
a73 High noise immunity
a73 ESD protection:
a78 HBM JESD22-A114-C exceeds 2000 V
a78 MM JESD22-A115-A exceeds 200 V
a73 Low power dissipation
a73 Specified from −40 °Cto+85°C and from −40 °C to +125 °C.
3. Quick reference data
[1] C
PD
is used to determine the dynamic power dissipation (P
D
in µW).
P
D
=C
PD
× V
CC
2
× f
i
× N + (C
L
× V
CC
2
× f
o
) where:
f
i
= input frequency in MHz;
f
o
= output frequency in MHz;
C
L
= output load capacitance in pF;
V
CC
= supply voltage in Volts;
N = number of inputs switching;
(C
L
× V
CC
2
× f
o
) = dissipation due to the output if the combination of the pull up voltage and resistance
results in V
CC
at the output.
74AHC1G09
2-input AND gate with open-drain output
Rev. 01 — 26 September 2005 Product data sheet
Table 1: Quick reference data
GND = 0 V; T
amb
=25°C; t
r
=t
f
≤ 3.0 ns.
Symbol Parameter Conditions Min Typ Max Unit
t
PZL
, t
PLZ
propagation delay
A and B to Y
V
CC
= 4.5 V to 5.5 V;
C
L
=15pF
- 3.2 5.5 ns
C
i
input capacitance - 1.5 10 pF
C
PD
power dissipation
capacitance
C
L
= 50 pF; f
i
= 1 MHz;
V
I
= GND to V
CC
[1]
-5-pF