BDX53F
BDX54F
COMPLEMENTARY SILICON POWER
DARLINGTON TRANSISTORS
a73 STMicroelectronics PREFERRED
SALESTYPES
a73 COMPLEMENTARY PNP - NPN DEVICES
a73 MONOLITHIC DARLINGTON
CONFIGURATION
a73 INTEGRATED ANTIPARALLEL
COLLECTOR-EMITTER DIODE
APPLICATIONS
a73 LINEAR AND SWITCHING INDUSTRIAL
EQUIPMENT
DESCRIPTION
The BDX53F is a silicon Epitaxial-Base NPN
power transistor in monolithic Darlington
configuration, mounted in Jedec TO-220 plastic
package. It is intented for use in power linear and
switching applications. The complementary PNP
type is BDX54F.
INTERNAL SCHEMATIC DIAGRAM
October 2003
ABSOLUTE MAXIMUM RATINGS
Symbol Parameter Value Unit
NPN BDX53F
PNP BDX54F
V
CBO
Collector-Base Voltage (I
E
= 0) 160 V
V
CEO
Collector-Emitter Voltage (I
B
= 0) 160 V
V
EBO
Emitter-base Voltage (I
C
= 0) 5 V
I
C
Collector Current 8 A
I
CM
Collector Peak Current 12 A
I
B
Base Current 0.2 A
P
tot Total Dissipation at Tc ≤ 25
o
C 60 W
T
stg
Storage Temperature -65 to 150
o
C
T
j
Max. Operating Junction Temperature 150
o
C
For PNP types voltage and current values are negative.
1
2
3
TO-220
R1 Typ. = 10 KΩ R2 Typ. = 150 Ω
®
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