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TARGET DATA
July 2000
AM1214-130
RF POWER TRANSISTORS
L-BAND RADAR APPLICATIONS
• REFRACTORY /GOLD METALLIZATION
• EMITTER SITE BALLASTING
• LOW RF THERMAL RESISTANCE
• INPUT/OUTPUT MATCHING
• OVERLAY GEOMETRY
• METAL/CERAMIC HERMETIC PACKAGE
• P
OUT
= 130 W MIN. WITH 8.0 dB GAIN
• 1215-1400 MHz OPERATION
DESCRIPTION
The AM1214-130 is a rugged, Class C common
base device designed as driver of AM1214-250 for
new L - Band medium & long pulse radar applica-
tions.
Minimal amplitude droop over a long pulse of 500
microsec. is guaranteed by a thermal design incor-
porating an overlay site-ballasted die geometry.
PIN CONNECTION
1
3
42
1. Collector
2. Base
3. Emitter
4. Base
M259
hermetically sealed
ORDER CODE
AM1214-130
BRANDING
XAM1214-130
ABSOLUTE MAXIMUM RATINGS (T
CASE
= 25°C)
Symbol Parameter Value Unit
P
DISS
Power Dissipation (T
C
≤ 85°C)* TBD W
I
C
Device Current* 12 A
V
CBO
Collector-Base Voltage 70 V
T
j
Operating Junction Temperature +250 °C
T
STG
Storage Temperature -65 to +200 °C
THERMAL DATA
R
th(j-c)
Junction -Case Thermal Resistance* TBD °C/W
* Applies only to rated RF amplifier operation: 150 microsec / 10%