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1N6705

器件描述:ULTRAFAST RECTIFIER
器件厂商:MICROSEMI [Microsemi Corporation]
文件大小:57.95KB,共2页
Sponsor by e络盟
器件资料摘要:
DESCRIPTION SYMBOL MAX. UNIT
Peak Repetitive Reverse Voltage VRRM 400 Volts
Working Peak Reverse Voltage VRWM 400 Volts
DC Blocking Voltage VR 400 Volts
Average Rectified Forward Current, Tc≤ 125°C IF(ave) 20 Amps
Nonrepetitive Peak Surge Current, tp= 8.3 ms, half-sinewave IFSM 100 Amps
Junction Temperature Range Tj -65 to +175 °C
Storage Temperature Range Tstg -65 to +175 °C
Thermal Resistance, Junction to Case: θJC 2.0 (typ. 1.6) °C/W
PRELIMINARY
1N6705
1N6705R
400 Volts
20 Amps
35 ns
Features

• passivated mesa structure for very low leakage currents
• Epitaxial structure minimizes forward voltage drop
• Hermetically sealed surface mount power package
• Low package inductance
• Very low thermal resistance
• Available as standard polarity (strap-to-anode, 1N6705) and reverse
polarity (strap-to-cathode: 1N6705R)
Maximum Ratings @ 25 C (unless otherwise specified)

Mechanical Outline
Datasheet# MSC0862
2830 S. Fairview St.
Santa Ana, CA 92704
PH: (714) 979-8220
FAX: (714) 966-5256
ULTRAFAST
RECTIFIER
G-BODY (DO-217AA)