AF9902M
2N and 2P-Channel Enhancement Mode Power MOSFET


This datasheet contains new product information. Anachip Corp. reserves the rights to modify the product specification without notice. No liability is assumed as a result of the use of
this product. No rights under any patent accompany the sale of the product.
Rev. 1.0 Sep 22, 2005
1/8
„ Features

- Simple Drive Requirement
- Low On-Resistance
- Full Bridge Application on LCD Monitor Inverter
- Pb Free Plating Product

„ Product Summary

CH BV
DSS
(V) R
DS(ON)
(mΩ) I
D
(A)
N 30 40 4.3
P -30 70 -3.3

„ Pin Assignments

SO-8
5
6
7
8
4
3
2
1 P1G
P1S/P2S
N2D/P2D
P2G
N1G
N1D/P1D
N1S/N2S
N2G

„ General Description

The advanced power MOSFET provides the designer
with the best combination of fast switching,
ruggedized device design, low on-resistance and
cost-effectiveness.

The SO-8 package is universally preferred for all
commercial-industrial surface mount applications and
suited for low voltage applications such as DC/DC
converters.


„ Pin Descriptions

Pin Name Description
N1G Gate (NMOS1)
N1D/P1D Drain(NMOS1) / Drain(PMOS1)
N1S/N2S Source(NMOS1) / Source(NMOS2)
N2G Gate (NMOS2)
P2G Gate (PMOS2)
N2D/P2D Drain(NMOS2) / Drain(PMOS2)
P1S/P2S Source(PMOS1) / Source(PMOS2)
P1G Gate (PMOS1)
„ Ordering information
A X 9902M X X
PN PackageFeature
F :MOSFET S: SO-8
Packing
Blank : Tube or Bulk
A : Tape & Reel

„ Block Diagram
P1S P2S
N1S N2S
N2GN1G
P1G P2G
P1N1D P2N2D