1/7July 2005
n NPN TRANSISTOR
n HIGH VOLTAGE CAPABILITY
n LOW SPREAD OF DYNAMIC PARAMETERS
n MINIMUM LOT-TO-LOT SPREAD FOR
RELIABLE OPERATION
n VERY HIGH SWITCHING SPEED
APPLICATIONS
n DEDICATED FOR PFC SOLUTION IN
HALF-BRIDGE VOLTAGE FED TOPOLOGY
n ELECTRONIC BALLAST FOR
FLUORESCENT LIGHTING
DESCRIPTION
The device is manufactured using high voltage
Multi Epitaxial Planar technology for high
switching speeds and medium voltage capability.
It uses a Cellular Emitter structure with planar
edge termination to enhance switching speeds
while maintaining the wide RBSOA.
The device is designed for use as PFC in high
frequency ballast half Bridge voltage fed topology.
Figure 1: Package
Figure 2: Internal Schematic Diagram
Table 1: Order Codes


1
2
3

TO-220
Part Number Marking Package Packaging
BUL804 BUL804 TO-220 Tube
BUL804
HIGH VOLTAGE FAST-SWITCHING
NPN POWER TRANSISTOR

Rev. 1